2017 17th International Workshop on Junction Technology (IWJT)
Latest Publications

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32

(FIVE YEARS 0)

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3

(FIVE YEARS 0)

Published By IEEE

9784863486263

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si tunnel FETs

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966505 ◽

2017 ◽

Author(s):

Andreas Schenk ◽

Saurabh Sant ◽

Kirsten Moselund ◽

Heike Riel

Keyword(s):

Interface Traps ◽

Oxide Interface ◽

Tunnel Fets ◽

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Ultra-shallow junction formation on 3D silicon and germanium device structures by ion energy decoupled plasma doping

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966516 ◽

2017 ◽

Author(s):

Y S Kim ◽

Hyukjun Kown

Keyword(s):

Shallow Junction ◽

Plasma Doping ◽

Device Structures ◽

Junction Formation ◽

Silicon And Germanium

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Heavily-doped SOI substrate and transfer printing for charge injection into TMDC layer

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966512 ◽

2017 ◽

Author(s):

Ryo Ikoma ◽

Takamasa Kawanago

Keyword(s):

Charge Injection ◽

Transfer Printing ◽

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Nano-devices with advanced junction engineering and improved energy efficiency

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966498 ◽

2017 ◽

Author(s):

Adrian M. Ionescu

Keyword(s):

Energy Efficiency

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Characterization of residual defects in plasma-exposed Si substrates using cathodoluminescence and positron annihilation spectroscopy

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966519 ◽

2017 ◽

Author(s):

Yoshihiro Sato ◽

Satoshi Shibata ◽

Ryota Sakaida ◽

Koji Eriguchi

Keyword(s):

Positron Annihilation ◽

Positron Annihilation Spectroscopy ◽

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Ion implantation technique for conductivity control of GaN

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966524 ◽

2017 ◽

Author(s):

Tetsuo Narita ◽

Keita Kataoka ◽

Masakazu Kanechika ◽

Tetsu Kachi ◽

Tsutomu Uesugi

Keyword(s):

Ion Implantation ◽

Implantation Technique

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Ultra-low (1.2×10−9 Ωcm2) p-Si0.55Ge0.45 contact resistivity (ρc) using nanosecond laser anneal for 7nm nodes and beyond

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966504 ◽

2017 ◽

Author(s):

Chih-Yang Chang ◽

Fareen Adeni Khaja ◽

Kelly E Hollar ◽

K. V. Rao ◽

Christopher Lazik ◽

...

Keyword(s):

Contact Resistivity ◽

Nanosecond Laser ◽

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Formation of magnesium silicide for source material in Si based tunnel FET by annealing of Mg/Si thin film multi-stacks

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966522 ◽

2017 ◽

Author(s):

Yan Wu ◽

Kuniyuki Kakushima ◽

Yoshihiro Takahashi

Keyword(s):

Thin Film ◽

Source Material ◽

Magnesium Silicide ◽

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Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966503 ◽

2017 ◽

Author(s):

Hongmiao Gao ◽

Rikuta Aoki ◽

Masaya Sasaki ◽

Masanobu Miyao ◽

Taizoh Sadoh

Keyword(s):

Low Temperature

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2D carrier profiles by SSRM and TCAD for root cause analysis of low Vt PFET

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966506 ◽

2017 ◽

Author(s):

J. N. Nxumalo ◽

Y. Y. Wang ◽

R. Krishnasamy ◽

A. Katnani

Keyword(s):

Root Cause Analysis ◽

Cause Analysis ◽

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