Lateral confinement by low pressure chemical vapor deposition-based selective epitaxial growth of Si1−xGex/Si nanostructures

1997 ◽  
Vol 81 (10) ◽  
pp. 6709-6715 ◽  
Author(s):  
L. Vescan ◽  
C. Dieker ◽  
A. Souifi ◽  
T. Stoica
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Lateral Confinement ◽  
Selective Epitaxial Growth ◽  
Pressure Chemical ◽  
Si Nanostructures

Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low Pressure Chemical Vapor Deposition Systems

1996 ◽  
Vol 448 ◽  
Author(s):  
I -M. Leet ◽  
W. -C. Wang ◽  
M. T. K. Koh ◽  
J.P. Denton ◽  
E. P. Kvam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Defect Density ◽  
Low Cost ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Selective Epitaxial Growth ◽  
Pressure Chemical

AbstractSelective epitaxial growth (SEG) of silicon-germanium (SiGe) films on patterned-oxide silicon substrates, using a tubular hot-wall low pressure chemical vapor deposition (LPCVD) system, is demonstrated in this study. This conventional system is proposed as a low cost alternative for SiGe epitaxial growth. Three process improvements needed to achieve quality growth are discussed. First, the hydrogen bake process is modified to eliminate Ge-outgassing. Secondly, a Si SEG buffer layer is deposited prior to SiGe SEG. Finally, a small flow of dichlorosilane is introduced during the temperature ramp-down period prior to SiGe SEG. The growth results are discussed in terms of growth selectivity, thickness uniformity, growth rate, defect density, SiGe film composition, and electrical properties.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition

1988 ◽  
Vol 52 (13) ◽  
pp. 1053-1055 ◽  
Author(s):  
D. Meakin ◽  
M. Stobbs ◽  
J. Stoemenos ◽  
N. A. Economou
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Epitaxial growth of 3C‐SiC on Si by low‐pressure chemical vapor deposition

1986 ◽  
Vol 49 (7) ◽  
pp. 388-390 ◽  
Author(s):  
Y. Fujiwara ◽  
E. Sakuma ◽  
S. Misawa ◽  
K. Endo ◽  
S. Yoshida
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical
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