Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition

2008 ◽  
Vol 254 (19) ◽  
pp. 6086-6089 ◽  
Author(s):  
Hiroki Tanno ◽  
Masao Sakuraba ◽  
Bernd Tillack ◽  
Junichi Murota
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Pressure ◽  
Pressure Chemical

Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition

1988 ◽  
Vol 52 (13) ◽  
pp. 1053-1055 ◽  
Author(s):  
D. Meakin ◽  
M. Stobbs ◽  
J. Stoemenos ◽  
N. A. Economou
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

A homogeneous atomic layer MoS2(1−x)Se2xalloy prepared by low-pressure chemical vapor deposition, and its properties

Nanoscale ◽  
2017 ◽  
Vol 9 (2) ◽  
pp. 594-603 ◽  
Author(s):  
Sima Umrao ◽  
Jaeho Jeon ◽  
Su Min Jeon ◽  
Young Jin Choi ◽  
Sungjoo Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Pressure ◽  
Pressure Chemical
Sign in / Sign up

Export Citation Format

Share Document