Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor
1997 ◽
Vol 15
(6)
◽
pp. 1902
◽
2012 ◽
Vol 717-720
◽
pp. 105-108
◽
1997 ◽
Vol 15
(1)
◽
pp. 138
◽
Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition
2004 ◽
Vol 73-74
◽
pp. 514-518
◽
2008 ◽
Vol 26
(5)
◽
pp. 1712
1995 ◽
Vol 10
(2)
◽
pp. 320-327
◽
Keyword(s):
Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition
1996 ◽
Vol 169
(3)
◽
pp. 485-490
◽
2008 ◽
Vol 254
(19)
◽
pp. 6086-6089
◽
Keyword(s):