A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers

1997 ◽  
Vol 81 (10) ◽  
pp. 6857-6865 ◽  
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Mobility ◽  
Monte Carlo Study ◽  
Cubic Silicon Carbide

Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes

2013 ◽  
Vol 740-742 ◽  
pp. 295-300 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Epitaxial Film ◽  
Kinetic Monte Carlo ◽  
Three Dimensional ◽  
Monte Carlo Study ◽  
Kinetic Monte Carlo Simulations ◽  
Cubic Silicon Carbide ◽  
Silicon Carbide Polytype

We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (4H and 6H) substrates finding that the growth on misoriented (4°-10° degree off) 6H substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths

scholarly journals Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

2021 ◽  
Author(s):  
Janusz Wozny ◽  
Andrii Kovalchuk ◽  
Zbigniew Lisik ◽  
Jacek Podgorski ◽  
Piotr Bugalski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Electric Fields ◽  
Density Of States ◽  
Electron Mobility ◽  
Crucial Issue ◽  
Calculated Density ◽  
Correct Calculation

AbstractWe carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.

Full band Monte Carlo study of high field transport in cubic phase silicon carbide

2003 ◽  
Vol 93 (6) ◽  
pp. 3389-3394 ◽  
Author(s):  
H.-E. Nilsson ◽  
U. Englund ◽  
M. Hjelm ◽  
E. Bellotti ◽  
K. Brennan
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Field ◽  
Monte Carlo Study ◽  
Cubic Phase ◽  
Full Band

scholarly journals Universality of electron mobility curves in MOSFETs: a Monte Carlo study

1995 ◽  
Vol 42 (2) ◽  
pp. 258-265 ◽  
Author(s):  
F. Gamiz ◽  
J.A. Lopez-Villanueva ◽  
J. Banqueri ◽  
J.E. Carceller ◽  
P. Cartujo
Keyword(s):  
Monte Carlo ◽  
Electron Mobility ◽  
Monte Carlo Study

Monte Carlo Study of the early Growth Stages of 3C-SiC on Misoriented <11-20> and <1-100> 6H-SiC Substrates: Role of Step-Island Interaction

2015 ◽  
Vol 821-823 ◽  
pp. 201-204
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Three Dimensional ◽  
Monte Carlo Study ◽  
Growth Stages ◽  
Specific Direction ◽  
Kinetic Monte Carlo Simulations ◽  
Cubic Silicon Carbide ◽  
Silicon Carbide Polytype

In this paper we use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on hexagonal 6H-SiC step-bunched substrates with miscuts towards the <11-20> and <1-100> directions. We find that the preferential 3C conversion observed on <1-100> misoriented substrates could be due to a different step-to-island interaction which enhances island stability and expansion in this specific direction. For this reason 3-4° degrees off step-bunched 6H substrates with miscut towards the <1-100> direction should be the best choice for the stable and reproducible hetero-polytypical growth of high quality cubic epitaxial films.

scholarly journals Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

2010 ◽  
Vol 108 (9) ◽  
pp. 094505 ◽  
Author(s):  
B. G. Vasallo ◽  
H. Rodilla ◽  
T. González ◽  
G. Moschetti ◽  
J. Grahn ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Mobility ◽  
Monte Carlo Study ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Kink Effect
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