Full band Monte Carlo study of high field transport in cubic phase silicon carbide

2003 ◽  
Vol 93 (6) ◽  
pp. 3389-3394 ◽  
Author(s):  
H.-E. Nilsson ◽  
U. Englund ◽  
M. Hjelm ◽  
E. Bellotti ◽  
K. Brennan
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Field ◽  
Monte Carlo Study ◽  
Cubic Phase ◽  
Full Band

A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC

2000 ◽  
Vol 338-342 ◽  
pp. 765-768 ◽  
Author(s):  
H.-E. Nilsson ◽  
E. Bellotti ◽  
K.F. Brennan ◽  
M. Hjelm
Keyword(s):  
Monte Carlo ◽  
High Field ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Full Band

GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth

2011 ◽  
Vol 47 (4) ◽  
pp. 447-454 ◽  
Author(s):  
Michele Moresco ◽  
Francesco Bertazzi ◽  
Enrico Bellotti
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Full Band

Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

2004 ◽  
Vol 19 (4) ◽  
pp. S206-S208 ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Band Gap ◽  
High Field ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Electron ◽  
Full Band ◽  
Wide Band Gap Semiconductors

A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers

1997 ◽  
Vol 81 (10) ◽  
pp. 6857-6865 ◽  
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Mobility ◽  
Monte Carlo Study ◽  
Cubic Silicon Carbide

Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes

2013 ◽  
Vol 740-742 ◽  
pp. 295-300 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Epitaxial Film ◽  
Kinetic Monte Carlo ◽  
Three Dimensional ◽  
Monte Carlo Study ◽  
Kinetic Monte Carlo Simulations ◽  
Cubic Silicon Carbide ◽  
Silicon Carbide Polytype

We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (4H and 6H) substrates finding that the growth on misoriented (4°-10° degree off) 6H substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

2001 ◽  
Vol 184 (1-4) ◽  
pp. 194-198 ◽  
Author(s):  
Mats Hjelm ◽  
Kent Bertilsson ◽  
Hans-Erik Nilsson
Keyword(s):  
Monte Carlo ◽  
Transport Properties ◽  
Monte Carlo Study ◽  
Surface Transport ◽  
Full Band

scholarly journals High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 41-45 ◽  
Author(s):  
F. M. Bufler ◽  
P. Graf ◽  
B. Meinerzhagen
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
High Field ◽  
Hole Transport ◽  
Band Model ◽  
Strained Si ◽  
Saturation Velocity ◽  
Full Band ◽  
Structure Description ◽  
Strained Sige

Monte Carlo results are presented for the velocity-field characteristics of holes in (i) unstrained Si, (ii) strained Si and (iii) strained SiGe using a full band model as well as an analytic nonparabolic and anisotropic band structure description. The full band Monte Carlo simulations show a strong enhancement of the drift velocity in strained Si up to intermediate fields, but yield the same saturation velocity as in unstrained Si. The drift velocity in strained SiGe is also significantly enhanced for low fields while being substantially reduced in the high-field regime. The results of the analytic band models agree well with the full band results up to medium field strengths and only the saturation velocity is significantly underestimated.

Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

2003 ◽  
Vol 2 (2-4) ◽  
pp. 109-112 ◽  
Author(s):  
Hiroshi Nakatsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Hole Transport ◽  
Two Dimensional ◽  
Strained Si ◽  
Full Band
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