Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process

2011 ◽  
Vol 99 (16) ◽  
pp. 161908 ◽  
Author(s):  
Ho Yong Chong ◽  
Kyu Wan Han ◽  
Young Soo No ◽  
Tae Whan Kim
2020 ◽  
Vol 20 (11) ◽  
pp. 6675-6678
Author(s):  
Donghyeon Lee ◽  
Pyungho Choi ◽  
Areum Park ◽  
Woojin Jeon ◽  
Donghee Choi ◽  
...  

In this study, we fabricated Hf-doped indium zinc oxide thin-film transistors (HIZO TFTs) using a solution process. Channel layers of the TFTs were optimized by varying the molar ratio of Hf in the channel layers. The electrical properties of the fabricated devices were compared to gallium indium zinc oxide (GIZO). HIZO TFTs showed 0.12 V threshold voltage, 0.45 V/decade subthreshold swing and 1.24 × 106 on–off current ratio, which were excellent compared to that of GIZO. In particular, when a positive gate bias stress of 10 V was applied for 103 s, the HIZO TFT exhibited a lower threshold voltage shift of 1.11 V than the GIZO TFT (1.88 V). These results originate from the higher oxygen bonding with Hf in IZO compared to Ga atoms. We confirmed that Hf acts as an excellent carrier suppressor whose properties exceed those of Ga.


2016 ◽  
Vol 8 (4) ◽  
pp. 926-930
Author(s):  
Sang-Hun Choi ◽  
Kyoung-Tae Park ◽  
Bum-Sung Kim ◽  
Taek-Soo Kim ◽  
Seok-Jun Seo

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