Drive current and hot carrier reliability improvements of high-aspect-ratio n-channel fin-shaped field effect transistor with high-tensile contact etching stop layer

2011 ◽  
Vol 99 (17) ◽  
pp. 173505 ◽  
Author(s):  
Wen-Shiang Liao ◽  
Mu-Chun Wang ◽  
Yongming Hu ◽  
Szu-Hung Chen ◽  
Kun-Ming Chen ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drive Current ◽  
Hot Carrier ◽  
Effect Transistor

scholarly journals High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing

Nano Letters ◽  
2019 ◽  
Vol 19 (5) ◽  
pp. 2879-2887 ◽  
Author(s):  
Serena Rollo ◽  
Dipti Rani ◽  
Renaud Leturcq ◽  
Wouter Olthuis ◽  
César Pascual García
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrochemical Biosensing ◽  
Effect Transistor

scholarly journals Correction to “High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing”

Nano Letters ◽  
2020 ◽  
Vol 20 (4) ◽  
pp. 2934-2934
Author(s):  
Serena Rollo ◽  
Dipti Rani ◽  
Renaud Leturcq ◽  
Wouter Olthuis ◽  
César Pascual García
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrochemical Biosensing ◽  
Effect Transistor

A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current

Nano Letters ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1758-1764
Author(s):  
Zhaowu Tang ◽  
Chunsen Liu ◽  
Xiaohe Huang ◽  
Senfeng Zeng ◽  
Liwei Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Steep Slope ◽  
Drive Current ◽  
Source Field ◽  
Effect Transistor
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