scholarly journals Low-operating voltage and stable organic field-effect transistors with poly (methyl methacrylate) gate dielectric solution deposited from a high dipole moment solvent

2011 ◽  
Vol 99 (24) ◽  
pp. 243302 ◽  
Author(s):  
N. B. Ukah ◽  
J. Granstrom ◽  
R. R. Sanganna Gari ◽  
G. M. King ◽  
S. Guha
2014 ◽  
Vol 104 (8) ◽  
pp. 083106 ◽  
Author(s):  
A. Sanne ◽  
H. C. P. Movva ◽  
S. Kang ◽  
C. McClellan ◽  
C. M. Corbet ◽  
...  

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.


2006 ◽  
Vol 45 (No. 29) ◽  
pp. L770-L772 ◽  
Author(s):  
Tomoaki Onoue ◽  
Ichiro Nakamura ◽  
Yukio Sakabe ◽  
Takeshi Yasuda ◽  
Tetsuo Tsutsui

2011 ◽  
Vol 12 (7) ◽  
pp. 1253-1257 ◽  
Author(s):  
Loig Kergoat ◽  
Nicolas Battaglini ◽  
Luciano Miozzo ◽  
Benoit Piro ◽  
Minh-Chau Pham ◽  
...  

2007 ◽  
Vol 471 (1) ◽  
pp. 221-227 ◽  
Author(s):  
Tomoyuki Ashimine ◽  
Tomoaki Onoue ◽  
Takeshi Yasuda ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui

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