Low-Operating-Voltage Organic Field-Effect Transistors with Poly-p-Xylylene/High-kPolymer Bilayer Gate Dielectric

2006 ◽  
Vol 45 (No. 29) ◽  
pp. L770-L772 ◽  
Author(s):  
Tomoaki Onoue ◽  
Ichiro Nakamura ◽  
Yukio Sakabe ◽  
Takeshi Yasuda ◽  
Tetsuo Tsutsui
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Operating Voltage ◽  
Organic Field Effect Transistors

scholarly journals Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Gate Leakage

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.

Parylene-C and High-kPolymer Bilayer Gate Dielectric for Low-Operating Voltage Organic Field-Effect Transistors

2007 ◽  
Vol 471 (1) ◽  
pp. 221-227 ◽  
Author(s):  
Tomoyuki Ashimine ◽  
Tomoaki Onoue ◽  
Takeshi Yasuda ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Parylene C
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