Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change materials

2011 ◽  
Vol 99 (26) ◽  
pp. 261914 ◽  
Author(s):  
Yan Cheng ◽  
Zhitang Song ◽  
Yifeng Gu ◽  
Sannian Song ◽  
Feng Rao ◽  
...  
2013 ◽  
Vol 873 ◽  
pp. 825-830 ◽  
Author(s):  
Xing Long Ji ◽  
Liang Cai Wu ◽  
Feng Rao ◽  
Zhi Tang Song ◽  
Min Zhu ◽  
...  

In this paper, the two time instability factors in phase change memory, amorphous resistance drift and spontaneous crystallization process, are studied based on Ti2.75(SbxTe)97.25 and Ti6.85(SbxTe)93.15. The drift coefficients of both components are calculated and compared under room temperature. The reason why the drift coefficient decreases with the Ti concentration increases is discussed based on the band structure model of amorphous phase change materials. And the data retention change trend is also presented. The experiment results and the physical explaination can also be extended to other metallic element doped SbxTe alloy phase change materials.


2020 ◽  
Vol 128 (7) ◽  
pp. 075701
Author(s):  
Jiabin Shen ◽  
Tao Li ◽  
Xin Chen ◽  
Shujing Jia ◽  
Shilong Lv ◽  
...  

2018 ◽  
Vol 57 (4) ◽  
pp. 041401 ◽  
Author(s):  
Dong Zhou ◽  
Liangcai Wu ◽  
Lin Wen ◽  
Liya Ma ◽  
Xingyao Zhang ◽  
...  

2020 ◽  
Vol 53 (49) ◽  
pp. 495303 ◽  
Author(s):  
M S Arjunan ◽  
Anirban Mondal ◽  
Suresh Durai ◽  
K V Adarsh ◽  
Anbarasu Manivannan

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