Effects of recombination current on the current–voltage characteristics in metal–InGaAs Schottky diodes

AbstractDeep levels have been measured in molecular beam epitaxy grown Ga0.51In0.49P/GaAs heterostructure by double correlation deep level transient spectroscopy. Gold(Au) and Aluminum (Al) metals were used for Schottky contact. A contact-related hole trap with an activation energy of 0.50-0.75eV was observed at the A1/GaInP interface, but not at the Au/GaInP interface. To our knowledge, this contact-related trap has not been reported before. We attribute this trap to the oxygen contamination, or a vacancy-related defect, VIn or VGa. A new electron trap at 0.28eV was also observed in both Au- and Al-Schottky diodes. Its depth profile showed that it is a bulk trap in GaInP epilayer. The temperature dependent current-voltage characteristics (I-V-T) show a large interface recombination current at the GaInP surface due to the Al-contact. Concentration of the interface trap and the magnitude of recombination current are both reduced by a rapid thermal annealing at/or above 450°C after the aluminum deposition.

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Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

Solid-State Electronics ◽

10.1016/0038-1101(95)00093-9 ◽

1996 ◽

Vol 39 (1) ◽

pp. 83-87 ◽

Cited By ~ 79

Author(s):

Enise Ayyildiz ◽

Abdulmecit Türüt ◽

Hasan Efeoğlu ◽

Sebahattin Tüzemen ◽

Mustafa Sağlam ◽

...

Keyword(s):

Interfacial Layer ◽

Series Resistance ◽

Schottky Diodes ◽

Forward Current ◽

Current Voltage ◽

Current Voltage Characteristics

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Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.749 ◽

2016 ◽

Vol 858 ◽

pp. 749-752 ◽

Cited By ~ 4

Author(s):

Anatoly M. Strel'chuk ◽

Viktor V. Zelenin ◽

Alexei N. Kuznetsov ◽

Joseph Tringe ◽

Albert V. Davydov ◽

...

Keyword(s):

Series Resistance ◽

Degradation Mechanism ◽

Schottky Diodes ◽

Defect Structures ◽

Induced Current ◽

Forward Current ◽

Current Voltage ◽

Before And After ◽

Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

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Current/voltage characteristics of degenerated molybdenum and platinum Schottky diodes

Electronics Letters ◽

10.1049/el:19800132 ◽

1980 ◽

Vol 16 (5) ◽

pp. 183 ◽

Cited By ~ 2

Author(s):

J. Martinez ◽

E. Calleja ◽

J. Piqueras

Keyword(s):

Schottky Diodes ◽

Current Voltage ◽

Current Voltage Characteristics

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Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

The Scientific World JOURNAL ◽

10.1155/2013/126982 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 6

Author(s):

S. Çetinkaya ◽

H. A. Çetinkara ◽

F. Bayansal ◽

S. Kahraman

Keyword(s):

Schottky Diodes ◽

Sol Gel ◽

Sem Images ◽

Gel Method ◽

Sol Gel Method ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Cbd Method ◽

Xrd Techniques

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. ConventionalI-Vand Norde’s methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.

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