high injection level
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Author(s):  
П.А. Иванов ◽  
А.С. Потапов ◽  
М.Ф. Кудояров ◽  
Т.П. Самсонова

AbstractThe effect of low-dose proton irradiation (irradiation dose 10^10–1 . 8 × 10^11 cm^–2) on the capacitance–voltage, forward current–voltage, and reverse-recovery characteristics of 4 H -SiC p – n _ o junction diodes is studied. Irradiation is performed with 1.8-MeV protons through a 10-μm-thick Ni-film (the proton energy and Ni-film thickness were chosen so that the projected proton range in silicon carbide is approximately equal to the p – n _ o junction depth). It is shown that proton irradiation in the above doses (i) does not change the concentration of majority carriers, (ii) leads to a dramatic decrease in the lifetime of nonequilibrium carriers (at a low injection level) (by several tens of times at the highest irradiation dose), and (iii) decreases the reverse-recovery charge at a high injection level (by up to a factor of 3 at the highest irradiation dose).



2017 ◽  
Vol 111 (20) ◽  
pp. 203503 ◽  
Author(s):  
A. V. Gert ◽  
A. P. Dmitriev ◽  
M. E. Levinshtein ◽  
V. S. Yuferev ◽  
J. W. Palmour


2016 ◽  
Vol 121 ◽  
pp. 41-46 ◽  
Author(s):  
Tigran T. Mnatsakanov ◽  
Michael E. Levinshtein ◽  
Alexey G. Tandoev ◽  
Sergey N. Yurkov ◽  
John W. Palmour


2015 ◽  
Vol 16 (1) ◽  
pp. 56-59
Author(s):  
O.M. Hontaruk ◽  
◽  
O.V. Konoreva ◽  
M.V. Lytovchenko ◽  
E.V. Malyi ◽  
...  


2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000149-000153 ◽  
Author(s):  
Lin Cheng ◽  
Anant K. Agarwal ◽  
Michael Oloughlin ◽  
Al Burk ◽  
Craig Capell ◽  
...  

In this paper, we report our recently developed 1 × 1 cm2, 12 kV SiC GTOs with a very low differential on-resistance (RON,Diff) of 4 mΩ·cm2 with respect to the device active area at high injection level current of 100 A/cm2 or higher, which is more than a 40% reduction from our previously reported work. This significant reduction in the on-resistance was attributed to an improvement of carrier lifetime in the SiC bulk region. The SiC GTO was wire-bonded and attached to a high-voltage package before the high-temperature measurement. Forward characteristics of the device were then measured using a Tektronics 371 curve tracer from room temperature up to 400°C. Over the temperature range, the RON,Diff of the 4H-SiC GTO increased modestly from 4 mΩ·cm2 at 20°C to 4.7 mΩ·cm2 at 400°C, while the forward voltage drop at 100 A decreased slightly from 3.97 V at 20°C to 3.6 V at 400°C. The gate to cathode blocking voltage (VGK) was measured using a customized high-voltage test set-up. The leakage current was measured 0.66 μA at a VGK of 12 kV at 20°C.



2011 ◽  
Vol 1 (1) ◽  
Author(s):  
Miron Cristea

AbstractCurrent-voltage p-n junction characteristics have been analyzed mainly at low injection levels. The high injection level region of the I/V characteristic allows the possibility of determining basic parameters of the semiconductor material, like the bulk doping concentration and charge carrier lifetime. Based on a new theoretical model of the p-n junction characteristics, valid for both low level and high level regions, a new general equation of the p-n junction is presented. It can serve for parameter extraction of semiconductor devices.





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