Effects of Thermal Annealing on Temperature-Dependent Current-Voltage Characteristics (I-V-T) of the Au/n-InP/In Schottky Diodes

2018 ◽  
Vol 55 (2) ◽  
pp. 105-108 ◽  
Author(s):  
F.E.Cimilli Çatır ◽  
Keyword(s):  
Thermal Annealing ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

Contact-Related Deep States in AI-GaInP/GaAs Interface

1993 ◽  
Vol 325 ◽  
Author(s):  
Z.C. Huang ◽  
C.R. Wie
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Oxygen Contamination ◽  
Related Defect ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Recombination Current

AbstractDeep levels have been measured in molecular beam epitaxy grown Ga0.51In0.49P/GaAs heterostructure by double correlation deep level transient spectroscopy. Gold(Au) and Aluminum (Al) metals were used for Schottky contact. A contact-related hole trap with an activation energy of 0.50-0.75eV was observed at the A1/GaInP interface, but not at the Au/GaInP interface. To our knowledge, this contact-related trap has not been reported before. We attribute this trap to the oxygen contamination, or a vacancy-related defect, VIn or VGa. A new electron trap at 0.28eV was also observed in both Au- and Al-Schottky diodes. Its depth profile showed that it is a bulk trap in GaInP epilayer. The temperature dependent current-voltage characteristics (I-V-T) show a large interface recombination current at the GaInP surface due to the Al-contact. Concentration of the interface trap and the magnitude of recombination current are both reduced by a rapid thermal annealing at/or above 450°C after the aluminum deposition.

scholarly journals Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
P. Pipinys ◽  
V. Lapeika
Keyword(s):  
Temperature Dependence ◽  
Leakage Current ◽  
Reverse Bias ◽  
Electron Tunneling ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Model Temperature

Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K) using for calculation the effective mass of 0.222 . and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy) are also explicable in the framework of the PhAT model.

Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes

2013 ◽  
Vol 47 (1) ◽  
pp. 81-84 ◽  
Author(s):  
P. A. Ivanov ◽  
N. D. Il’inskaya ◽  
A. S. Potapov ◽  
T. P. Samsonova ◽  
A. V. Afanas’ev ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

2012 ◽  
Vol 209 (8) ◽  
pp. 1575-1578 ◽  
Author(s):  
Basanta Roul ◽  
Thirumaleshwara N. Bhat ◽  
Mahesh Kumar ◽  
Mohana K. Rajpalke ◽  
A. T. Kalghatgi ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

THE CURRENT–VOLTAGE CHARACTERISTICS OF THE Au/MBEn-GaAs SCHOTTKY DIODES IN A WIDE TEMPERATURE RANGE

2013 ◽  
Vol 27 (19) ◽  
pp. 1350088 ◽  
Author(s):  
HASAN EFEOǦLU ◽  
ABDULMECIT TURUT
Keyword(s):  
Schottky Diodes ◽  
Thermionic Emission ◽  
Effective Area ◽  
Current Theory ◽  
Temperature Dependent ◽  
Temperature Range ◽  
A Value ◽  
Current Voltage ◽  
Lateral Inhomogeneity ◽  
Current Voltage Characteristics

The Au/MBE n- GaAs Schottky diodes have been fabricated by us. The slope of the conventional ln (I0/T2) versus (kT)-1 plotted in the temperature range of 120–350 K has given a Richardson constant (RC) of 7.69 A (cmK)-2 which is in close agreement with the value of 8.16 A/cm2 K 2 known for n-type GaAs . The barrier height (BH) value in 40–160 K range has decreased obeying to Gaussian distribution (GD) model of the BH based on thermionic emission current theory. The modified RC plot according to the GD model has given a RC value of 2.45 A (cmK)-2 or a value of 2.38 A (cmK)-2 by taking into account the temperature dependence of the standard deviation. Therefore, we have modified the Richardson's plot using the temperature dependent values of the effective area of the patches introduced by lateral inhomogeneity of the BHs and we have obtained a RC value of 8.10 A (cmK)-2.

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