ABSTRACTIon—beam induced epitaxial crystallization (IBIEC) of amorphous N1Si2 and CoSi2 layers is demonstrated. Epitaxial metal suicide layers on (111) Si substrates were implanted with 40 keV Si ions to form amorphous surface layers. IBIEC of amorphous NiSi2 and CoSi2 layers was induced at 13—74°C with 1.5 MeV Ne ion irradiation and proceeded in a layer—by—layer manner from the original amorphous/crystalline interface with activation energies of 0.26 ± 0.07 and 0.21 ± 0.06 eV for N1Si2 and CoSi2, respectively.
Synthesis of Non-thermal-equilibrium Composition Semiconductor by Ion-beam-induced Epitaxial Crystallization.