Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell

2000 ◽  
Vol 87 (11) ◽  
pp. 7988-7993 ◽  
Author(s):  
H. Q. Zheng ◽  
K. Radahakrishnan ◽  
S. F. Yoon ◽  
G. I. Ng
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical And Optical Properties ◽  
Si Doped

Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates

1987 ◽  
Vol 26 (Part 1, No. 7) ◽  
pp. 1097-1101 ◽  
Author(s):  
Takeshi Takamori ◽  
Toshiaki Fukunaga ◽  
Junji Kobayashi ◽  
Koichi Ishida ◽  
Hisao Nakashima
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical And Optical Properties ◽  
Si Doped

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Si:Er:O layers grown by molecular beam epitaxy: structural, electrical and optical properties

2001 ◽  
Vol 81 (1-3) ◽  
pp. 62-66 ◽  
Author(s):  
S. Scalese ◽  
G. Franzò ◽  
S. Mirabella ◽  
M. Re ◽  
A. Terrasi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical And Optical Properties

Electrical and optical properties of ZnO films grown by molecular beam epitaxy

2009 ◽  
Vol 255 (9) ◽  
pp. 4913-4915 ◽  
Author(s):  
S.P. Wang ◽  
C.X. Shan ◽  
B. Yao ◽  
B.H. Li ◽  
J.Y. Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Electrical And Optical Properties
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