Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
1987 ◽
Vol 26
(Part 1, No. 7)
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pp. 1097-1101
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2010 ◽
Vol 503
(1)
◽
pp. 155-158
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2001 ◽
Vol 81
(1-3)
◽
pp. 62-66
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2009 ◽
Vol 255
(9)
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pp. 4913-4915
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