Background:
Zinc oxide (ZnO) is one of the most attractive II-VI semiconductor oxide
material, because of its direct wide band gap (3.37 eV) and large binding energy (60 meV). Zinc oxide
(ZnO) is a promising semiconductor due to its optimised optical properties. Among semiconductor
nanostructures, the vertically aligned one-dimensional ZnO nanorods are very important for nano
device application.
Methods:
Vertically aligned ZnO nanorod arrays were grown on ZnO, aluminum doped ZnO
(ZnO:Al), tantalum doped ZnO (ZnO:Ta) and aluminum and tantalum co-doped ZnO (ZnO:Al,Ta)
seed layer by hydrothermal method.
Results:
The X-Ray Diffraction (XRD) investigation indicated the presence of hexagonal phase for
the both seed layers and nanorods. The Scanning Electron Microscope (SEM) images of ZnO and
doped ZnO seed layer thin-films show spherical shaped nanograins organized into wave like morphology.
The optical absorption spectra revealed shift in absorption edge towards the shorter wavelength
(blue shifted) for ZnO nanorods grown on ZnO:Al, ZnO:Ta and ZnO:Al,Ta seed layer compared
to ZnO nanorods grown on ZnO seed layer.
Conclusion:
The increase in band gap value for the ZnO nanorods grown on doped ZnO seed layers
due to the decrease in crystallite size and lattice constant as evidenced from XRD analysis. The
unique property of Al, Ta doped ZnO can be used to fabricate nano-optoelectronic devices and photovoltaic
devices, due to their improved optical properties.
Synthesis and Characterization of MgO Doped ZnO Nanorods Prepared by Solution Immersion Method and their Effect on Energy Band Gap