A unified model for insulator selection to form ultra-low resistivity metal-insulator-semiconductor contacts to n-Si, n-Ge, and n-InGaAs
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2017 ◽
Vol 38
(1)
◽
pp. 5-8
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1988 ◽
Vol 31
(10)
◽
pp. 1537-1539
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Keyword(s):
Keyword(s):