Characterization of defect evolution in ultrathin SiO2layers under applied electrical stress

2012 ◽  
Vol 112 (10) ◽  
pp. 103513 ◽  
Author(s):  
Cecile S. Bonifacio ◽  
Klaus van Benthem
Keyword(s):  
Electrical Stress ◽  
Defect Evolution

Characterization of Electrical Stress of Natural Ester Under Impulse Empirical Analysis

2018 ◽  
Author(s):  
Muhammad Ameerul Ikmal Ahmad Taufek ◽  
Nur Darina Ahmad ◽  
Siti Solehah Md Ramli ◽  
Nurul Huda Ishak ◽  
Mohd Taufiq Ishak ◽  
...  
Keyword(s):  
Empirical Analysis ◽  
Electrical Stress ◽  
Natural Ester

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

2014 ◽  
Vol 778-780 ◽  
pp. 151-154 ◽  
Author(s):  
Shi Yang Ji ◽  
Kazutoshi Kojima ◽  
Yuuki Ishida ◽  
Hirotaka Yamaguchi ◽  
Shingo Saito ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Doping Level ◽  
Growth Stage ◽  
Initial Growth ◽  
Al Doping ◽  
X Ray ◽  
Defect Evolution ◽  
Koh Etching

The defect evolution on 90 μm-thick heavily Al-doped 4H-SiC epilayers with Al doping level higher than 1020 cm-3 was studied by tracing back to initial growth stage to monitor major dislocations and their propagations in each growth stage. Results from X-ray topography and KOH etching demonstrate that all existing dislocations on the surface of 90 μm-thick epilayer can be identified as the defects originating from substrate. In other words, there seems no new dislocation generated after a long-term growth. Nevertheless, a high density of misfit dislocation was found appearing near the substrate/epilayer interface for epilayer with Al doping level of 3.5×1020 cm-3, while misfit dislocation cannot be seen on epilayer with Al doping level of 1.5×1020 cm-3.

scholarly journals Characterization of Changes in LDO Susceptibility After Electrical Stress

2013 ◽  
Vol 55 (5) ◽  
pp. 883-890 ◽  
Author(s):  
Jianfei Wu ◽  
Alexandre Boyer ◽  
Jiancheng Li ◽  
Sonia Ben Dhia ◽  
Rongjun Shen
Keyword(s):  
Electrical Stress

scholarly journals Quantitative 3D Characterization of Solidification Structure and Defect Evolution in Al Alloys

JOM ◽  
2012 ◽  
Vol 64 (1) ◽  
pp. 89-95 ◽  
Author(s):  
C. Puncreobutr ◽  
P. D. Lee ◽  
R. W. Hamilton ◽  
A. B. Phillion
Keyword(s):  
Al Alloys ◽  
Solidification Structure ◽  
Defect Evolution

Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy

2011 ◽  
Vol 51 (9-11) ◽  
pp. 1796-1800 ◽  
Author(s):  
F. Berthet ◽  
Y. Guhel ◽  
H. Gualous ◽  
B. Boudart ◽  
J.L. Trolet ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
The Self ◽  
Self Heating ◽  
Electrical Stress ◽  
Gan Hemts

Characterization of Temporary Extrusion Failures in Quarter-Micron Copper Interconnects

2005 ◽  
Vol 863 ◽  
Author(s):  
Yan Zhang ◽  
Junho Choy ◽  
Glenn H. Chapman ◽  
Karen L. Kavanagh
Keyword(s):  
Failure Mode ◽  
Copper Interconnects ◽  
Evolution Process ◽  
Shape Evolution ◽  
Electrical Stress ◽  
Soft Failure ◽  
Test Conditions ◽  
New Challenges ◽  
Electron Wind

AbstractWe report an unusual circuit failure mode induced by short-lived extrusions observed during DC and AC electromigration (EM) tests of quarter-micron damascene copper interconnects. This novel “soft” failure mode consists of extrusions forming, then self-dissolving before the traditional permanent void or extrusion failure. These failures shorten the lifetime significantly and bring new challenges to reliability tests. Two self-dissolution mechanisms under DC test conditions are discussed and extrusion shape evolution is modeled assuming both capillary and electron wind forces are present. Our model confirms that the electrical stress will accelerate the shape evolution process.

Morphological Characterization of Mycobacteriophage R1

1974 ◽  
Vol 32 ◽  
pp. 254-255
Author(s):  
B. L. Soloff ◽  
T. A. Rado
Keyword(s):  
Carbon Source ◽  
Stationary Phase ◽  
Growth Phase ◽  
Minimal Medium ◽  
Morphological Characterization ◽  
Logarithmic Growth Phase ◽  
Complete Lysis ◽  
Lysogenic Culture ◽  
Logarithmic Growth

Mycobacteriophage R1 was originally isolated from a lysogenic culture of M. butyricum. The virus was propagated on a leucine-requiring derivative of M. smegmatis, 607 leu−, isolated by nitrosoguanidine mutagenesis of typestrain ATCC 607. Growth was accomplished in a minimal medium containing glycerol and glucose as carbon source and enriched by the addition of 80 μg/ ml L-leucine. Bacteria in early logarithmic growth phase were infected with virus at a multiplicity of 5, and incubated with aeration for 8 hours. The partially lysed suspension was diluted 1:10 in growth medium and incubated for a further 8 hours. This permitted stationary phase cells to re-enter logarithmic growth and resulted in complete lysis of the culture.

AEM analysis of crystallization in Ti-based amorphous alloys

1983 ◽  
Vol 41 ◽  
pp. 270-271
Author(s):  
A.R. Pelton ◽  
A.F. Marshall ◽  
Y.S. Lee
Keyword(s):  
Magnetic Properties ◽  
Amorphous Alloys ◽  
Amorphous Materials ◽  
Isothermal Annealing ◽  
Amorphous Matrix ◽  
Nucleation And Growth ◽  
Current Interest ◽  
Amorphous Films ◽  
Electrical And Magnetic Properties

Amorphous materials are of current interest due to their desirable mechanical, electrical and magnetic properties. Furthermore, crystallizing amorphous alloys provides an avenue for discerning sequential and competitive phases thus allowing access to otherwise inaccessible crystalline structures. Previous studies have shown the benefits of using AEM to determine crystal structures and compositions of partially crystallized alloys. The present paper will discuss the AEM characterization of crystallized Cu-Ti and Ni-Ti amorphous films.Cu60Ti40: The amorphous alloy Cu60Ti40, when continuously heated, forms a simple intermediate, macrocrystalline phase which then transforms to the ordered, equilibrium Cu3Ti2 phase. However, contrary to what one would expect from kinetic considerations, isothermal annealing below the isochronal crystallization temperature results in direct nucleation and growth of Cu3Ti2 from the amorphous matrix.

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