scholarly journals Erratum: “The effects of neutral gas heating on H mode transition and maintenance currents in a 13.56 MHz planar coil inductively coupled plasma reactor” [Phys. Plasmas 19, 093501 (2012)]

2012 ◽  
Vol 19 (11) ◽  
pp. 119901 ◽  
Author(s):  
Kanesh K. Jayapalan ◽  
Oi-Hoong Chin
2014 ◽  
Vol 32 ◽  
pp. 1460320 ◽  
Author(s):  
O. H. Chin ◽  
K. K. Jayapalan ◽  
C. S. Wong

Heating of neutral gas in inductively coupled plasma (ICP) is known to result in neutral gas depletion. In this work, this effect is considered in the simulation of the magnetic field distribution of a 13.56 MHz planar coil ICP. Measured electron temperatures and densities at argon pressures of 0.03, 0.07 and 0.2 mbar were used in the simulation whilst neutral gas temperatures were heuristically fitted. The simulated results showed reasonable agreement with the measured magnetic field profile.


2000 ◽  
Vol 76 (18) ◽  
pp. 2508-2510
Author(s):  
Joachim Walewski ◽  
Jussi Larjo ◽  
Rolf Hernberg

2002 ◽  
Vol 91 (9) ◽  
pp. 6027-6033 ◽  
Author(s):  
Lance Delzeit ◽  
Ian McAninch ◽  
Brett A. Cruden ◽  
David Hash ◽  
Bin Chen ◽  
...  

AIChE Journal ◽  
2014 ◽  
Vol 60 (10) ◽  
pp. 3647-3664 ◽  
Author(s):  
Sangeeta B. Punjabi ◽  
Sunil N. Sahasrabudhe ◽  
S. Ghorui ◽  
A. K. Das ◽  
Narendra K. Joshi ◽  
...  

2010 ◽  
Vol 1249 ◽  
Author(s):  
George Andrew Antonelli ◽  
Gengwei Jiang ◽  
Mandyam Sriram ◽  
Kaushik Chattopadhyay ◽  
Wei Guo ◽  
...  

AbstractOrganosilicate materials with dielectric constants (k) ranging from 3.0 to 2.2 are in production or under development for use as interlayer dielectric materials in advanced interconnect logic technology. The dielectric constant of these materials is lowered through the addition of porosity which lowers the film density, making the patterning of these materials difficult. The etching kinetics and surface roughening of a series of low-k dielectric materials with varying porosity and composition were investigated as a function of ion beam angle in a 7% C4F8/Ar chemistry in an inductively-coupled plasma reactor. A similar set of low-k samples were patterned in a single damascene scheme. With a basic understanding of the etching process, we will show that it is possible to proactively design a low-k material that is optimized for a given patterning. A case study will be used to illustrate this point.


2018 ◽  
Vol 47 (9) ◽  
pp. 4964-4969 ◽  
Author(s):  
Jean-Pierre Landesman ◽  
Daniel T. Cassidy ◽  
Marc Fouchier ◽  
Erwine Pargon ◽  
Christophe Levallois ◽  
...  

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