scholarly journals Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices

2013 ◽  
Vol 102 (5) ◽  
pp. 053508 ◽  
Author(s):  
Kanika Bansal ◽  
Shouvik Datta
Keyword(s):  
Quantum Well ◽  
Light Emission ◽  
Negative Capacitance ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Modulated Light ◽  
Multi Quantum Well

Dielectric Response of Light Emitting Semiconductor Junction Diodes: Frequency and Temperature Domain Study

2014 ◽  
Vol 1635 ◽  
pp. 49-54 ◽  
Author(s):  
Kanika Bansal ◽  
Shouvik Datta
Keyword(s):  
Quantum Well ◽  
Dielectric Response ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Light Output ◽  
Low Frequency ◽  
Carrier Injection ◽  
Light Emitting ◽  
Conventional Models ◽  
Modulated Light

ABSTRACTWe report a change in the dielectric response of AlGaInP based multi quantum well diodes with the onset of modulated light emission. Observed variation in junction capacitance and modulated light emission, with frequency and temperature, suggests participation of slow defect channels in fast radiative recombination dynamics. Our work establishes prominent connection between electrical and optical properties of light emitting diodes and provides a tool to investigate the interesting condensed matter physics of these structures. Our observations demand a generalized physical framework, beyond conventional models, to understand an active light emitting diode under charge carrier injection. We suggest that the low frequency response can compromise the performance of these diodes under high frequency applications. We also suggest how internal quantum well structure can affect modulated light output efficiency of the device.

scholarly journals Thermally activated carrier transfer processes in InGaN∕GaN multi-quantum-well light-emitting devices

2005 ◽  
Vol 98 (2) ◽  
pp. 023703 ◽  
Author(s):  
C. L. Yang ◽  
L. Ding ◽  
J. N. Wang ◽  
K. K. Fung ◽  
W. K. Ge ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Thermally Activated ◽  
Carrier Transfer ◽  
Transfer Processes ◽  
Multi Quantum Well

Non-linear light emission of inorganic protonic diodes, H+LEDs

2021 ◽  
Vol 9 (9) ◽  
pp. 3052-3057
Author(s):  
Jerzy J. Langer ◽  
Ewelina Frąckowiak
Keyword(s):  
Light Emission ◽  
Stimulated Raman Scattering ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Light Pulses ◽  
Optical Effects ◽  
Non Linear ◽  
Intense Light ◽  
Light Beams ◽  
Intense Light Pulses

H+LEDs are light emitting devices based on a protonic p–n junction; now with no organic polymers. The unique are non-linear optical effects: collimated light beams and stimulated Raman scattering (SRS), observed while generating intense light pulses.

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

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