Local detection of deep carrier traps in the pn-junction of silicon solar cells

2013 ◽  
Vol 103 (1) ◽  
pp. 013901 ◽  
Author(s):  
T. Mchedlidze ◽  
L. Scheffler ◽  
J. Weber ◽  
M. Herms ◽  
J. Neusel ◽  
...  
2017 ◽  
Vol 7 (5) ◽  
pp. 1176-1183 ◽  
Author(s):  
Pierpaolo Spinelli ◽  
Bas W. H. van de Loo ◽  
Ard H. G. Vlooswijk ◽  
W. M. M. Kessels ◽  
Ilkay Cesar

2013 ◽  
Vol 1536 ◽  
pp. 39-44 ◽  
Author(s):  
D. J. Paez ◽  
E. Huante-Ceron ◽  
A. P. Knights

ABSTRACTWe report a preliminary study on the influence of indium doping on ultra-thin film silicon solar cells. The design of the cell reported here is such that it should elucidate the impact of the indium dopant, which is concentrated in the thin film. Indium, a deep level in silicon (0.157 eV above the valence band), acts as a p-type dopant and a sensitizer. Absorption through sub-bandgap transitions is expected based on the previously reported Impurity PhotoVoltaic (IPV) Effect [1]. It is proposed that the implementation of a novel vertical PN junction configuration together with the IPV effect enhances the efficiency of ultra-thin solar cells. The most efficient cell fabricated to date, in our research group, has a conversion efficiency of 4.3 % (active silicon thickness of 2.5 μm), a short-circuit current density of 14.9 mA/cm2 and an open-circuit voltage of 0.51 V under 1 sun illumination. The cell has not been optimized with any type of light trapping technique and 11.24 % of the cell surface is covered by the metal contacts. Numerical simulation indicates that for the geometry used, the maximum efficiency that may be expected is 9.8 % (compared to the 4.3 % measured).


2003 ◽  
Vol 762 ◽  
Author(s):  
Guozhen Yuea ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Kenneth Lord ◽  
Subhendu Guha

AbstractWe have observed a significant light-induced increase in the open-circuit voltage (Voc) of mixed-phase hydrogenated silicon solar cells. In this study, we investigate the kinetics of the light-induced effects. The results show that the cells with different initial Voc have different kinetic behavior. For the cells with a low initial Voc (less than 0.8 V), the increase in Voc is slow and does not saturate for light-soaking time of up to 16 hours. For the cells with medium initial Voc (0.8 ∼ 0.95 V), the Voc increases rapidly and then saturates. Cells with high initial Voc (0.95 ∼ 0.98 V) show an initial increase in Voc, followed bya Voc decrease. All light-soaked cells exhibit a degradation in fill factor. The temperature dependence of the kinetics shows that light soaking at high temperatures causes Voc increase to saturate faster than at low temperatures. The observed results can be explained by our recently proposed two-diode equivalent-circuit model for mixed-phase solar cells.


2008 ◽  
Vol 67 (7) ◽  
pp. 645-653
Author(s):  
L. P. Shuba ◽  
M. V. Kirichenko ◽  
V. R. Kopach ◽  
V. A. Antonova ◽  
A. M. Listratenko

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