Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

L. S. Wang; J. P. Xu; S. Y. Zhu; Y. Huang; P. T. Lai

doi:10.1063/1.4818000

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

Applied Physics Letters ◽

10.1063/1.4818000 ◽

2013 ◽

Vol 103 (9) ◽

pp. 092901 ◽

Cited By ~ 24

Author(s):

L. S. Wang ◽

J. P. Xu ◽

S. Y. Zhu ◽

Y. Huang ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Cited By ~ 1

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO2 Gate Dielectric

MATERIALS TRANSACTIONS ◽

10.2320/matertrans.m2010324 ◽

2011 ◽

Vol 52 (1) ◽

pp. 118-123 ◽

Cited By ~ 8

Author(s):

S. V. Jagadeesh Chandra ◽

Myung-Il Jeong ◽

Yun-Chang Park ◽

Jong-Won Yoon ◽

Chel-Jong Choi

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Structural And Electrical Properties

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Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

Applied Physics Letters ◽

10.1063/1.2798248 ◽

2007 ◽

Vol 91 (15) ◽

pp. 152905 ◽

Cited By ~ 7

Author(s):

J. P. Xu ◽

F. Ji ◽

C. X. Li ◽

P. T. Lai ◽

J. G. Guan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2297995 ◽

2014 ◽

Vol 61 (3) ◽

pp. 742-746 ◽

Cited By ~ 25

Author(s):

Li-Sheng Wang ◽

Lu Liu ◽

Jing-Ping Xu ◽

Shu-Yan Zhu ◽

Yuan Huang ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2010.5713759 ◽

2010 ◽

Author(s):

F Ji ◽

J P Xu ◽

C X Li ◽

P T Lai ◽

L F Deng ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

Applied Physics Letters ◽

10.1063/1.3462301 ◽

2010 ◽

Vol 97 (2) ◽

pp. 022903 ◽

Cited By ~ 28

Author(s):

H. X. Xu ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

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Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer

Applied Physics Letters ◽

10.1063/1.2954012 ◽

2008 ◽

Vol 92 (26) ◽

pp. 262902 ◽

Cited By ~ 9

Author(s):

X. F. Zhang ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai ◽

C. L. Chan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

Applied Physics A ◽

10.1007/s00339-010-5665-5 ◽

2010 ◽

Vol 99 (4) ◽

pp. 903-906 ◽

Cited By ~ 12

Author(s):

H. X. Xu ◽

J. P. Xu ◽

C. X. Li ◽

C. L. Chan ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

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Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different ambient

Thin Solid Films ◽

10.1016/j.tsf.2010.07.030 ◽

2010 ◽

Vol 518 (23) ◽

pp. 6962-6965 ◽

Cited By ~ 15

Author(s):

H.X. Xu ◽

J.P. Xu ◽

C.X. Li ◽

P.T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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