Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices
2019 ◽
Vol 34
(3)
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pp. 035027
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Keyword(s):
2009 ◽
Vol 48
(4)
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pp. 04C087
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2011 ◽
Vol 52
(1)
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pp. 118-123
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Keyword(s):