Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO<SUB>2</SUB> Gate Dielectric

Structural And Electrical Properties

Oxide Semiconductor ◽

Gate Electrode ◽

Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Cited By ~ 1

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Oxide Semiconductor

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

10.1063/1.4818000 ◽

2013 ◽

Vol 103 (9) ◽

pp. 092901 ◽

Cited By ~ 24

Author(s):

L. S. Wang ◽

J. P. Xu ◽

S. Y. Zhu ◽

Y. Huang ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Oxide Semiconductor

Effects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitors

Thin Solid Films ◽

10.1016/j.tsf.2019.03.009 ◽

2019 ◽

Vol 682 ◽

pp. 156-162 ◽

Cited By ~ 3

Author(s):

N. Manikanthababu ◽

V. Saikiran ◽

T. Basu ◽

K. Prajna ◽

S. Vajandar ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Ion Irradiation ◽

Structural And Electrical Properties

Oxide Semiconductor ◽

Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric

10.1063/1.3264086 ◽

2009 ◽

Vol 95 (19) ◽

pp. 192113 ◽

Cited By ~ 7

Author(s):

Hong Bae Park ◽

Chang Seo Park ◽

Chang Yong Kang ◽

Seung-Chul Song ◽

Byoung Hun Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Gate Electrode ◽

Capping Layer

Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

10.1063/1.2798248 ◽

2007 ◽

Vol 91 (15) ◽

pp. 152905 ◽

Cited By ~ 7

Author(s):

J. P. Xu ◽

F. Ji ◽

C. X. Li ◽

P. T. Lai ◽

J. G. Guan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor Capacitor

Oxide Semiconductor ◽

Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2297995 ◽

2014 ◽

Vol 61 (3) ◽

pp. 742-746 ◽

Cited By ~ 25

Author(s):

Li-Sheng Wang ◽

Lu Liu ◽

Jing-Ping Xu ◽

Shu-Yan Zhu ◽

Yuan Huang ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor Capacitor

Oxide Semiconductor ◽

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N

10.1109/edssc.2010.5713759 ◽

2010 ◽

Author(s):

F Ji ◽

J P Xu ◽

C X Li ◽

P T Lai ◽

L F Deng ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Oxide Semiconductor

Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

10.1063/1.3462301 ◽

2010 ◽

Vol 97 (2) ◽

pp. 022903 ◽

Cited By ~ 28

Author(s):

H. X. Xu ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High K

Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer

10.1063/1.2954012 ◽

2008 ◽

Vol 92 (26) ◽

pp. 262902 ◽

Cited By ~ 9

Author(s):

X. F. Zhang ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai ◽

C. L. Chan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor Capacitor

Oxide Semiconductor ◽