Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer

Applied Physics Letters ◽

10.1063/1.2954012 ◽

2008 ◽

Vol 92 (26) ◽

pp. 262902 ◽

Author(s):

X. F. Zhang ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai ◽

C. L. Chan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

Applied Physics Letters ◽

10.1063/1.2798248 ◽

2007 ◽

Vol 91 (15) ◽

pp. 152905 ◽

Author(s):

J. P. Xu ◽

F. Ji ◽

C. X. Li ◽

P. T. Lai ◽

J. G. Guan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2297995 ◽

2014 ◽

Vol 61 (3) ◽

pp. 742-746 ◽

Author(s):

Li-Sheng Wang ◽

Lu Liu ◽

Jing-Ping Xu ◽

Shu-Yan Zhu ◽

Yuan Huang ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric

Applied Physics Letters ◽

10.1063/1.4916539 ◽

2015 ◽

Vol 106 (12) ◽

pp. 123504 ◽

Author(s):

L. S. Wang ◽

J. P. Xu ◽

L. Liu ◽

H. H. Lu ◽

P. T. Lai ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Multilayer Composite ◽

Metal Oxide Semiconductor Capacitor

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Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700180 ◽

2017 ◽

Vol 11 (9) ◽

pp. 1700180 ◽

Author(s):

Li Ning Liu ◽

Hoi Wai Choi ◽

Jing Ping Xu ◽

Pui To Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

Applied Physics Letters ◽

10.1063/1.4818000 ◽

2013 ◽

Vol 103 (9) ◽

pp. 092901 ◽

Author(s):

L. S. Wang ◽

J. P. Xu ◽

S. Y. Zhu ◽

Y. Huang ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2776846 ◽

2007 ◽

Vol 91 (9) ◽

pp. 093509 ◽

Author(s):

N. Goel ◽

P. Majhi ◽

W. Tsai ◽

M. Warusawithana ◽

D. G. Schlom ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Indium Content ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Indium Content ◽

Metal Oxide Semiconductor Capacitor

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High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4979101 ◽

2017 ◽

Vol 110 (12) ◽

pp. 123506 ◽

Author(s):

L. N. Liu ◽

H. W. Choi ◽

J. P. Xu ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor ◽

High K Gate Dielectric

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Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2017.2702717 ◽

2017 ◽

Vol 17 (2) ◽

pp. 458-462 ◽

Author(s):

Han-Han Lu ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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