Photoelectrochemical oxidation-treated AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with oxidized layer/Ta2O5/Al2O3 gate dielectric stack

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Photoelectrochemical Oxidation ◽

Al2o3 Gate Dielectric

A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2197370 ◽

2012 ◽

Vol 33 (7) ◽

pp. 997-999 ◽

Cited By ~ 27

Author(s):

Han-Yin Liu ◽

Bo-Yi Chou ◽

Wei-Chou Hsu ◽

Ching-Sung Lee ◽

Chiu-Sheng Ho

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

Fabrication Process ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

Thin Solid Films ◽

10.1016/j.tsf.2013.01.028 ◽

2013 ◽

Vol 544 ◽

pp. 526-529 ◽

Cited By ~ 7

Author(s):

Ray-Ming Lin ◽

Fu-Chuan Chu ◽

Atanu Das ◽

Sheng-Yu Liao ◽

Shu-Tsun Chou ◽

...

Keyword(s):

Rare Earth ◽

Electron Mobility ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Material and device characterizations of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors with reactive-sputtered HfO2 gate dielectric

2006 64th Device Research Conference ◽

10.1109/drc.2006.305144 ◽

2006 ◽

Author(s):

Chang Liu ◽

Eng Chor ◽

Leng Tan

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04df03 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DF03 ◽

Cited By ~ 10

Author(s):

Joseph J. Freedsman ◽

Toshiharu Kubo ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Electron Mobility ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System

Journal of Electronic Materials ◽

10.1007/s11664-021-08879-8 ◽

2021 ◽

Author(s):

Hsin-Ying Lee ◽

Ting-Wei Chang ◽

Ching-Ting Lee

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Dielectric Layer ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

IEEE Electron Device Letters ◽

10.1109/led.2008.917326 ◽

2008 ◽

Vol 29 (4) ◽

pp. 284-286 ◽

Cited By ~ 52

Author(s):

Li-Hsien Huang ◽

Shu-Hao Yeh ◽

Ching-Ting Lee ◽

Haipeng Tang ◽

Jennifer Bardwell ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Oxidation Method ◽

Photoelectrochemical Oxidation

Investigation of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Photoelectrochemical Oxidation Method

2007 Conference on Lasers and Electro-Optics - Pacific Rim ◽

10.1109/cleopr.2007.4391582 ◽

2007 ◽

Author(s):

Li-Hsien Huang ◽

Shu-Hao Yeh ◽

Ching-Ting Lee ◽

Haipeng Tang ◽

Jennifer Bardwell ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Oxidation Method ◽

Photoelectrochemical Oxidation

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4811754 ◽

2013 ◽

Vol 102 (24) ◽

pp. 243509 ◽

Cited By ~ 35

Author(s):

M. Ťapajna ◽

M. Jurkovič ◽

L. Válik ◽

Š. Haščík ◽

D. Gregušová ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.2814052 ◽

2007 ◽

Vol 91 (21) ◽

pp. 212101 ◽

Cited By ~ 46

Author(s):

H. C. Lin ◽

T. Yang ◽

H. Sharifi ◽

S. K. Kim ◽

Y. Xuan ◽

...

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Comprehensive characterization of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with TiO2 gate dielectric

physica status solidi (c) ◽

10.1002/pssc.201600227 ◽

2016 ◽

Author(s):

Yu-Shyan Lin ◽

Chi-Che Lu ◽

Wei-Chou Hsu

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Comprehensive Characterization