Evaluation of interface state density of strained-Si metal-oxide-semiconductor interfaces by conductance method

Journal of Applied Physics ◽

10.1063/1.4867935 ◽

2014 ◽

Vol 115 (9) ◽

pp. 094509 ◽

Author(s):

Weili Cai ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Strained Si ◽

Semiconductor Interfaces ◽

Conductance Method

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Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Journal of Applied Physics ◽

10.1063/1.4755804 ◽

2012 ◽

Vol 112 (7) ◽

pp. 073702 ◽

Author(s):

Takuya Hoshii ◽

Sunghoon Lee ◽

Rena Suzuki ◽

Noriyuki Taoka ◽

Masafumi Yokoyama ◽

...

Keyword(s):

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Semiconductor Interfaces

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Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

Journal of Applied Physics ◽

10.1063/1.3673572 ◽

2012 ◽

Vol 111 (1) ◽

pp. 014502 ◽

Author(s):

Hironori Yoshioka ◽

Takashi Nakamura ◽

Tsunenobu Kimoto

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Accurate Evaluation ◽

Semiconductor Structures

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Low interface state density of SiC-based metal–oxide–semiconductor structure formed with perchloric acid at 203 °C

Applied Physics Letters ◽

10.1063/1.1492023 ◽

2002 ◽

Vol 81 (2) ◽

pp. 271-273 ◽

Author(s):

Takeaki Sakurai ◽

Masayoshi Nishiyama ◽

Yasushiro Nishioka ◽

Hikaru Kobayashi

Keyword(s):

Metal Oxide ◽

Perchloric Acid ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Structure

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Reduction of interface‐state density by F2treatment in a metal‐oxide‐semiconductor diode prepared from a photochemical vapor deposited SiO2film

Applied Physics Letters ◽

10.1063/1.102292 ◽

1989 ◽

Vol 55 (23) ◽

pp. 2402-2404 ◽

Author(s):

Kohji Inoue ◽

Masakazu Nakamura ◽

Masanori Okuyama ◽

Yoshihiro Hamakawa

Keyword(s):

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Semiconductor Diode

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Interface state density of SiO2/p-type 4H-SiC ( 0001), ( 112¯0), ( 11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

Applied Physics Letters ◽

10.1063/1.4946863 ◽

2016 ◽

Vol 108 (15) ◽

pp. 152108 ◽

Author(s):

Takuma Kobayashi ◽

Seiya Nakazawa ◽

Takafumi Okuda ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

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Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing

Applied Physics Letters ◽

10.1063/1.126103 ◽

2000 ◽

Vol 76 (12) ◽

pp. 1585-1587 ◽

Author(s):

K. Fukuda ◽

S. Suzuki ◽

T. Tanaka ◽

K. Arai

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Hydrogen Annealing ◽

Semiconductor Structures

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Interface State Density Reduction and Effect of Oxidation Temperature on Fluorine Incorporation and Profiling for Fluorinated Metal Oxide Semiconductor Capacitors

Journal of The Electrochemical Society ◽

10.1149/1.2056216 ◽

1993 ◽

Vol 140 (4) ◽

pp. 1160-1164 ◽

Author(s):

Dimitrios N. Kouvatsos ◽

Fred A. Stevie ◽

Ralph J. Jaccodine

Keyword(s):

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxidation Temperature ◽

Oxide Semiconductor ◽

Density Reduction

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Response to “Comment on ‘Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing’ ” [Appl. Phys. Lett. 78, 4043 (2001)]

Applied Physics Letters ◽

10.1063/1.1379979 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4045-4045 ◽

Author(s):

K. Fukuda ◽

K. Arai ◽

S. Suzuki ◽

T. Tanaka

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Hydrogen Annealing ◽

Semiconductor Structures

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Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.2496 ◽

1999 ◽

Vol 38 (Part 1, No. 4B) ◽

pp. 2496-2500 ◽

Author(s):

Tran Ngoc Duyet ◽

Hiroki Ishikuro ◽

Yi Shi ◽

Makoto Takamiya ◽

Takuya Saraya ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

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Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses

Journal of Applied Physics ◽

10.1063/1.3665720 ◽

2011 ◽

Vol 110 (11) ◽

pp. 114115 ◽

Author(s):

G. W. Paterson ◽

M. C. Holland ◽

I. G. Thayne ◽

A. R. Long

Keyword(s):

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor

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