Interface state density of SiO2/p-type 4H-SiC ( 0001), ( 112¯0), ( 11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes
1995 ◽
Vol 34
(Part 2, No. 7B)
◽
pp. L879-L882
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1993 ◽
Vol 140
(4)
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pp. 1160-1164
◽
1999 ◽
Vol 38
(Part 1, No. 4B)
◽
pp. 2496-2500
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