A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

2014 ◽  
Vol 115 (10) ◽  
pp. 103706 ◽  
Author(s):  
D. P. Ettisserry ◽  
N. Goldsman ◽  
A. Lelis
2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean

2005 ◽  
Vol 483-485 ◽  
pp. 593-596 ◽  
Author(s):  
David J. Meyer ◽  
Morgen S. Dautrich ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis

Utilizing an very sensitive electron spin resonance (ESR) technique, spin dependent recombination (SDR) we have identified interface and near interface trapping centers in 4H and 6H SiC/SiO2 metal oxide semiconductor field effect transistors (MOSFETs). We extend our group’s earlier observations on 6H devices to the more technologically important 4H system and find that several centers can play important roles in limiting the performance of SiC based MOSFETs.


2003 ◽  
Vol 42 (Part 2, No. 6B) ◽  
pp. L625-L627 ◽  
Author(s):  
Takeshi Ohshima ◽  
Kin Kiong Lee ◽  
Yuuki Ishida ◽  
Kazutoshi Kojima ◽  
Yasunori Tanaka ◽  
...  

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Martin Hauck ◽  
Johannes Lehmeyer ◽  
Gregor Pobegen ◽  
Heiko B. Weber ◽  
Michael Krieger

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