Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

2010 ◽  
Vol 19 (9) ◽  
pp. 097106
Author(s):  
Wang Shou-Guo ◽  
Zhang Yi-Men ◽  
Zhang Yu-Ming
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Parameter Analysis ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Ion Implanted

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors

2005 ◽  
Vol 86 (3) ◽  
pp. 032104 ◽  
Author(s):  
Shahram Ghanad Tavakoli ◽  
Sungkweon Baek ◽  
Hyo Sik Chang ◽  
Dae Won Moon ◽  
Hyunsang Hwang
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Shallow Junction ◽  
Ion Implanted

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

2005 ◽  
Vol 483-485 ◽  
pp. 593-596 ◽  
Author(s):  
David J. Meyer ◽  
Morgen S. Dautrich ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis
Keyword(s):  
Silicon Carbide ◽  
Electron Spin Resonance ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spin Resonance ◽  
Trapping Centers

Utilizing an very sensitive electron spin resonance (ESR) technique, spin dependent recombination (SDR) we have identified interface and near interface trapping centers in 4H and 6H SiC/SiO2 metal oxide semiconductor field effect transistors (MOSFETs). We extend our group’s earlier observations on 6H devices to the more technologically important 4H system and find that several centers can play important roles in limiting the performance of SiC based MOSFETs.

The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

2003 ◽  
Vol 42 (Part 2, No. 6B) ◽  
pp. L625-L627 ◽  
Author(s):  
Takeshi Ohshima ◽  
Kin Kiong Lee ◽  
Yuuki Ishida ◽  
Kazutoshi Kojima ◽  
Yasunori Tanaka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Cubic Silicon Carbide
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