Mechanical stress effects on Pb(Zr,Ti)O3 thin-film ferroelectric capacitors embedded in a standard complementary metal-oxide-semiconductor process

2014 ◽  
Vol 104 (22) ◽  
pp. 222908 ◽  
Author(s):  
Antonio G. Acosta ◽  
John A. Rodriguez ◽  
Toshikazu Nishida
2017 ◽  
Vol 9 (15) ◽  
pp. 13262-13268 ◽  
Author(s):  
Fabian Ambriz-Vargas ◽  
Gitanjali Kolhatkar ◽  
Maxime Broyer ◽  
Azza Hadj-Youssef ◽  
Rafik Nouar ◽  
...  

1991 ◽  
Vol 69 (3-4) ◽  
pp. 170-173
Author(s):  
M. Doan ◽  
Lj. Ristic

A lateral magnetotransistor that is sensitive to a magnetic field applied either parallel or perpendicular to the chip's surface is reported. It is fabricated using the standard complementary metal oxide semiconductor process. The deflection of the carriers in the base region is considered as the basic principle of operation. The device shows a linear response to a magnetic field in both directions. The minimum magnetic induction to be detected is in the order of 10 μT at f = 1 kHz.


2001 ◽  
Vol 78 (20) ◽  
pp. 3091-3093 ◽  
Author(s):  
J. Y. Dai ◽  
Z. R. Guo ◽  
S. F. Tee ◽  
C. L. Tay ◽  
Eddie Er ◽  
...  

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