Understanding the amorphous-to-microcrystalline silicon transition in SiF4/H2/Ar gas mixtures

2014 ◽  
Vol 140 (23) ◽  
pp. 234706 ◽  
Author(s):  
Jean-Christophe Dornstetter ◽  
Bastien Bruneau ◽  
Pavel Bulkin ◽  
Erik V. Johnson ◽  
Pere Roca i Cabarrocas
2014 ◽  
Vol 92 (7/8) ◽  
pp. 740-743 ◽  
Author(s):  
Jean-Christophe Dornstetter ◽  
Junkang Wang ◽  
Bastien Bruneau ◽  
Erik V. Johnson ◽  
Pere Roca i Cabarrocas

Hydrogenated microcrystalline silicon is of great interest as the intrinsic layer in thin film solar cells. It is generally accepted that optimized cells use an I-layer with a crystalline fraction ranging from 50% to 70%. We report here on the use of fully crystallized layers deposited from SiF4/H2/Ar gas mixtures. A VOC of 536 mV and a JSC of 25.4 mA/cm2 have been obtained in PIN solar cells using a fully crystallized intrinsic material. Fourier transform photocurrent spectroscopy measurements show that the films have a very low defect density down to 5.1 × 1014 cm−3. The role of H2 during deposition has been investigated: it is demonstrated that H2 is needed to remove F by forming HF molecules. When all atomic F has been removed from the plasma, the remaining atomic H can then contribute to μc-Si:H growth.


ChemInform ◽  
2010 ◽  
Vol 23 (40) ◽  
pp. no-no
Author(s):  
E. SIPP ◽  
F. LANGLAIS ◽  
R. NASLAIN

1999 ◽  
Vol 38 (Part 1, No. 8) ◽  
pp. 4872-4875 ◽  
Author(s):  
Min-Cherl Jung ◽  
Hyeong-Do Kim ◽  
Moonsup Han ◽  
William Jo ◽  
Dong Chun Kim

2009 ◽  
Vol 49 (2) ◽  
pp. 164-170 ◽  
Author(s):  
Yuming Wang ◽  
Zhangfu Yuan ◽  
Hiroyuki Matsuura ◽  
Fumitaka Tsukihashi

1989 ◽  
Vol 40 (9) ◽  
pp. 5458-5460 ◽  
Author(s):  
U. Asaf ◽  
W. S. Felps ◽  
S. P. McGlynn

1990 ◽  
Vol 57 (21) ◽  
pp. 2175-2177 ◽  
Author(s):  
G. A. Hebner ◽  
G. N. Hays
Keyword(s):  

1992 ◽  
Vol 186 (1) ◽  
pp. 77-87 ◽  
Author(s):  
E. Sipp ◽  
F. Langlais ◽  
R. Naslain

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