On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors
2016 ◽
Vol 55
(8)
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pp. 084301
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2013 ◽
Vol 153
(1)
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pp. 53-57
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2014 ◽
Vol 53
(4S)
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pp. 04EF09
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2018 ◽
Vol 32
(2)
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pp. e2518
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