Analysis of energy states of two-dimensional electron gas in pseudomorphically strained InSb high-electron-mobility transistors taking into account the nonparabolicity of the conduction band

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

High Electron Mobility ◽

Comparison between theoretical and experimental results for energy states of two-dimensional electron gas in pseudomorphically strained InAs high-electron-mobility transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ef09 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EF09 ◽

Cited By ~ 3

Author(s):

Yui Nishio ◽

Takahiro Tange ◽

Naomi Hirayama ◽

Tsutomu Iida ◽

Yoshifumi Takanashi

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

High Electron Mobility ◽

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

Optimization of two-dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors

10.1002/jnm.2518 ◽

2018 ◽

Vol 32 (2) ◽

pp. e2518 ◽

Cited By ~ 2

Author(s):

Abdelmalek Douara ◽

Bouaza Djellouli ◽

Hamza Abid ◽

Abdelaziz Rabehi ◽

Abderrezzaq Ziane ◽

...

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

High Electron Mobility ◽

Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab0409 ◽

2019 ◽

Vol 58 (SC) ◽

pp. SCCD10

Author(s):

Tomoki Hoshino ◽

Nobuya Mori

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron ◽

Dimensional Electron ◽

High Electron Mobility ◽

Digital Alloy ◽

Effects of SiN x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/19/1/017306 ◽

2010 ◽

Vol 19 (1) ◽

pp. 017306-4 ◽

Cited By ~ 7

Author(s):

Ren Fan ◽

Hao Zhi-Biao ◽

Wang Lei ◽

Wang Lai ◽

Li Hong-Tao ◽

...

Keyword(s):

Electron Gas ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

High Electron Mobility ◽

Current Collapse ◽

Measurement of brightness temperature of two-dimensional electron gas in channel of a high electron mobility transistor at ultralow dissipation power

Solid-State Electronics ◽

10.1016/j.sse.2016.03.010 ◽

2016 ◽

Vol 121 ◽

pp. 20-24 ◽

Cited By ~ 2

Author(s):

A.M. Korolev ◽

V.M. Shulga ◽

O.G. Turutanov ◽

V.I. Shnyrkov

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

High Electron Mobility ◽

Dimensional Electron Gas ◽

Dissipation Power

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.4896900 ◽

2014 ◽

Vol 116 (13) ◽

pp. 134506 ◽

Cited By ~ 43

Author(s):

B. Bakeroot ◽

S. You ◽

T.-L. Wu ◽

J. Hu ◽

M. Van Hove ◽

...

Keyword(s):

Electron Gas ◽

High Electron ◽

Dimensional Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Dimensional Electron Gas ◽

Recessed Gate

Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility

Journal of Applied Physics ◽

10.1063/1.3500465 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104502 ◽

Cited By ~ 23

Author(s):

Min Chu ◽

Andrew D. Koehler ◽

Amit Gupta ◽

Toshikazu Nishida ◽

Scott E. Thompson

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

Gauge Factor ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

High Electron Mobility ◽

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

Applied Physics Letters ◽

10.1063/5.0045910 ◽

2021 ◽

Vol 118 (12) ◽

pp. 122105

Author(s):

R. Lingaparthi ◽

N. Dharmarasu ◽

K. Radhakrishnan ◽

A. Ranjan ◽

Tian Long Alex Seah ◽

...

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

High Electron Mobility ◽

Photoreflectance and photoluminescence investigations of two-dimensional electron gas in pseudomorphic high electron mobility transistor structures

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2007.09.202 ◽

2008 ◽

Vol 40 (5) ◽

pp. 1380-1382 ◽

Cited By ~ 1

Author(s):

D.Y. Lin ◽

M.C. Wu ◽

H.J. Lin ◽

W.L. Chen

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

High Electron Mobility ◽

Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Solid State Communications ◽

10.1016/j.ssc.2012.10.010 ◽

2013 ◽

Vol 153 (1) ◽

pp. 53-57 ◽

Cited By ~ 3

Author(s):

Dong Ji ◽

Yanwu Lu ◽

Bing Liu ◽

Guipeng Liu ◽

Qinsheng Zhu ◽

...

Keyword(s):

Electron Gas ◽

High Electron ◽

Dimensional Electron ◽

High Electron Mobility ◽

Double Heterojunction ◽

Dimensional Electron Gas ◽

Interfacial Charge