Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab0409 ◽

2019 ◽

Vol 58 (SC) ◽

pp. SCCD10

Author(s):

Tomoki Hoshino ◽

Nobuya Mori

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Digital Alloy ◽

Dimensional Electron Gas

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Analysis of energy states of two-dimensional electron gas in pseudomorphically strained InSb high-electron-mobility transistors taking into account the nonparabolicity of the conduction band

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.084301 ◽

2016 ◽

Vol 55 (8) ◽

pp. 084301 ◽

Author(s):

Yui Nishio ◽

Takato Sato ◽

Naomi Hirayama ◽

Tsutomu Iida ◽

Yoshifumi Takanashi

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dimensional Electron Gas

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Comparison between theoretical and experimental results for energy states of two-dimensional electron gas in pseudomorphically strained InAs high-electron-mobility transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ef09 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EF09 ◽

Author(s):

Yui Nishio ◽

Takahiro Tange ◽

Naomi Hirayama ◽

Tsutomu Iida ◽

Yoshifumi Takanashi

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dimensional Electron Gas

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Optimization of two-dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2518 ◽

2018 ◽

Vol 32 (2) ◽

pp. e2518 ◽

Author(s):

Abdelmalek Douara ◽

Bouaza Djellouli ◽

Hamza Abid ◽

Abdelaziz Rabehi ◽

Abderrezzaq Ziane ◽

...

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dimensional Electron Gas

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On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.4896900 ◽

2014 ◽

Vol 116 (13) ◽

pp. 134506 ◽

Author(s):

B. Bakeroot ◽

S. You ◽

T.-L. Wu ◽

J. Hu ◽

M. Van Hove ◽

...

Keyword(s):

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Metal Insulator ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dimensional Electron Gas ◽

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Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Solid State Communications ◽

10.1016/j.ssc.2012.10.010 ◽

2013 ◽

Vol 153 (1) ◽

pp. 53-57 ◽

Author(s):

Dong Ji ◽

Yanwu Lu ◽

Bing Liu ◽

Guipeng Liu ◽

Qinsheng Zhu ◽

...

Keyword(s):

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction ◽

Dimensional Electron Gas ◽

Interfacial Charge

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Gate leakage currents induced by thermal fluctuation on two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors

Thin Solid Films ◽

10.1016/j.tsf.2016.12.051 ◽

2017 ◽

Vol 623 ◽

pp. 98-101 ◽

Author(s):

Jian Peng ◽

Xiwen Liu ◽

Dong Ji ◽

Yanwu Lu

Keyword(s):

Electron Gas ◽

Thermal Fluctuation ◽

High Electron Mobility Transistors ◽

High Electron ◽

Dimensional Electron ◽

Leakage Currents ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dimensional Electron Gas

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Influence of a two-dimensional electron gas on current-voltage characteristics of Al 0.3 Ga 0.7 N/GaN high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/21/6/067201 ◽

2012 ◽

Vol 21 (6) ◽

pp. 067201 ◽

Author(s):

Dong Ji ◽

Bing Liu ◽

Yan-Wu Lu ◽

Miao Zou ◽

Bo-Ling Fan

Keyword(s):

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Dimensional Electron Gas

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Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Applied Physics Letters ◽

10.1063/1.5142546 ◽

2020 ◽

Vol 116 (12) ◽

pp. 123501

Author(s):

Weijie Wang ◽

Jie Chen ◽

James Spencer Lundh ◽

Shahab Shervin ◽

Seung Kyu Oh ◽

...

Keyword(s):

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Gas Channel ◽

Electron Mobility Transistors ◽

Mechanical Bending ◽

Dimensional Electron Gas

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Effects of SiN x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/19/1/017306 ◽

2010 ◽

Vol 19 (1) ◽

pp. 017306-4 ◽

Author(s):

Ren Fan ◽

Hao Zhi-Biao ◽

Wang Lei ◽

Wang Lai ◽

Li Hong-Tao ◽

...

Keyword(s):

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

Dimensional Electron Gas

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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4841715 ◽

2013 ◽

Vol 103 (23) ◽

pp. 232109 ◽

Author(s):

Huijie Li ◽

Guipeng Liu ◽

Hongyuan Wei ◽

Chunmei Jiao ◽

Jianxia Wang ◽

...

Keyword(s):

Schottky Barrier Height ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Spatial Fluctuation ◽

Electron Mobility Transistors ◽

Dimensional Electron Gas

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