Photo-crystallization in a-Se layer structures: Effects of film-substrate interface-rigidity

2014 ◽  
Vol 116 (19) ◽  
pp. 193511 ◽  
Author(s):  
G. P. Lindberg ◽  
T. O'Loughlin ◽  
N. Gross ◽  
A. Mishchenko ◽  
A. Reznik ◽  
...  
Keyword(s):  
Substrate Interface ◽  
Layer Structures ◽  
Film Substrate

Parallel Glide: A Fundamentally Different Type of Dislocation Motion in Ultrathin Metal Films

2003 ◽  
Vol 779 ◽  
Author(s):  
T. John Balk ◽  
Gerhard Dehm ◽  
Eduard Arzt
Keyword(s):  
Thermal Cycling ◽  
Grain Boundaries ◽  
Film Surface ◽  
Metal Films ◽  
Geometric Constraints ◽  
Film Stress ◽  
Diffusional Creep ◽  
Creep Model ◽  
Substrate Interface ◽  
Film Substrate

AbstractWhen confronted by severe geometric constraints, dislocations may respond in unforeseen ways. One example of such unexpected behavior is parallel glide in unpassivated, ultrathin (200 nm and thinner) metal films. This involves the glide of dislocations parallel to and very near the film/substrate interface, following their emission from grain boundaries. In situ transmission electron microscopy reveals that this mechanism dominates the thermomechanical behavior of ultrathin, unpassivated copper films. However, according to Schmid's law, the biaxial film stress that evolves during thermal cycling does not generate a resolved shear stress parallel to the film/substrate interface and therefore should not drive such motion. Instead, it is proposed that the observed dislocations are generated as a result of atomic diffusion into the grain boundaries. This provides experimental support for the constrained diffusional creep model of Gao et al.[1], in which they described the diffusional exchange of atoms between the unpassivated film surface and grain boundaries at high temperatures, a process that can locally relax the film stress near those boundaries. In the grains where it is observed, parallel glide can account for the plastic strain generated within a film during thermal cycling. One feature of this mechanism at the nanoscale is that, as grain size decreases, eventually a single dislocation suffices to mediate plasticity in an entire grain during thermal cycling. Parallel glide is a new example of the interactions between dislocations and the surface/interface, which are likely to increase in importance during the persistent miniaturization of thin film geometries.

Self-Ordered Vicinal-Surface-Like Nanosteps at the Thin Metal-Film/Substrate Interface

2012 ◽  
Vol 116 (22) ◽  
pp. 12149-12155 ◽  
Author(s):  
Shirly Borukhin ◽  
Cecile Saguy ◽  
Maria Koifman ◽  
Boaz Pokroy
Keyword(s):  
Metal Film ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Vicinal Surface ◽  
Substrate Interface ◽  
Film Substrate

Nucleation and Heterointerface Structure of InAs Epilayers Grown on InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
K. S. Chandra Sekhar ◽  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Surface Morphology ◽  
Electronic Properties ◽  
Growth Temperature ◽  
High Speed ◽  
Interface Roughness ◽  
Structural Defects ◽  
Lower Growth ◽  
Substrate Interface ◽  
Film Substrate ◽  
Inp Substrates

ABSTRACTHeteroepitaxial growth of indium arsenide films on indium phosphide substrates is being actively pursued since the electronic properties of these films make them promising materials for optoelectronic and other high speed devices. The various structural aspects of the film that affect their electronic properties are structural defects like dislocations, film-substrate interface roughness and chemical inhomogeneities. In InAs films, electrons accumulate at the film-air interface, making surface morphology an important factor that decides the electronic properties. The InAs films used in this study were grown on InP substrates by metal organic vapor deposition, at different temperatures. A higher growth temperature not only resulted in poor surface morphology of the film, but also created a rough film-substrate interface. However, at all deposition temperatures, the film-substrate interfaces are sharp. At lower growth temperature, the interfaces were flat. Films grown at lower temperatures had good surface morphology and a flat and shaip heterointerface.

Measuring Evolution of Transfer Film–Substrate Interface Using Low Wear Alumina PTFE

2018 ◽  
Vol 66 (3) ◽  
Author(s):  
Jiaxin Ye ◽  
Wei Sun ◽  
Yan Zhang ◽  
Xiaojun Liu ◽  
Kun Liu
Keyword(s):  
Transfer Film ◽  
Substrate Interface ◽  
Low Wear ◽  
Film Substrate

Thermal Boundary Resistance at YBaCuO Film-Substrate Interface

1993 ◽  
pp. 405-406
Author(s):  
A. V. Sergeev ◽  
E. E. Aksaev ◽  
I. G. Gogidze ◽  
G. N. Gol’tsman ◽  
A. D. Semenov ◽  
...  
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Substrate Interface ◽  
Film Substrate
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