Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors
2014 ◽
Vol 53
(4S)
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pp. 04EF07
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2013 ◽
Vol 52
(7R)
◽
pp. 071102
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2011 ◽
Vol 14
(5)
◽
pp. J19
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Keyword(s):
2015 ◽
Vol 135
(6)
◽
pp. 192-198
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Keyword(s):
Keyword(s):