Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism

2015 ◽  
Vol 117 (16) ◽  
pp. 164501 ◽  
Author(s):  
A. Price ◽  
A. Martinez
Keyword(s):  
Green's Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Phonon Scattering ◽  
Function Formalism ◽  
Gaas Nanowire ◽  
Effect Transistor ◽  
Non Equilibrium Green’S Function ◽  
Green's Function Formalism ◽  
Non Equilibrium

The Parametric Study of Armchair Graphene Nanoribbon Field Effect Transistor by Non-Equilibrium Green’s Function Method

2020 ◽  
Vol 20 (8) ◽  
pp. 4832-4838
Author(s):  
Ji-Hyun Hur
Keyword(s):  
Green’S Function ◽  
Green's Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Effect Transistor ◽  
Silicon Cmos ◽  
Armchair Graphene Nanoribbon ◽  
Non Equilibrium Green’S Function ◽  
Non Equilibrium

We have carried out a comprehensive parametric analysis on the potential performance of a graphene nanoribbon field effect transistor (GNRFET). We modeled the behavior of GNRFETs with nanometer width GNR channels to formulate a self-consistent, non-equilibrium Green’s function (NEGF) scheme in conjunction with the Poisson equation and allow the GNRFET to operate as a switch. Based on the results, we propose a metric to compete with current silicon CMOS highperformance (HP) or low-power (LP) devices, explaining that this can vary widely depending on the GNRFET structure parameters.

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