Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N
Keyword(s):
1995 ◽
Vol 34
(Part 1, No. 9A)
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pp. 4593-4598
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2010 ◽
Vol 59
(9)
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pp. 671-674
Keyword(s):
2007 ◽
Vol 50
(6)
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pp. 1827
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1995 ◽
Vol 13
(3)
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pp. 782-786
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2012 ◽
Vol 51
(8R)
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pp. 085501
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