Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy

2015 ◽  
Vol 117 (24) ◽  
pp. 244307 ◽  
Author(s):  
K. Tyszka ◽  
D. Moraru ◽  
A. Samanta ◽  
T. Mizuno ◽  
R. Jabłoński ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Comparative Study ◽  
Kelvin Probe Force Microscopy ◽  
Single Electron ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Single Electron Transport

scholarly journals Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14822-14828 ◽  
Author(s):  
Dingxun Fan ◽  
Sen Li ◽  
N. Kang ◽  
Philippe Caroff ◽  
L. B. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Electron ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Dots ◽  
Single Electron Transport ◽  
Insb Nanowires

Single electron transport is demonstrated in high-quality MBE-grown InSb nanowire single quantum dots with a dot length up to ∼700 nm.

Nanoscale Mapping of Strain and Composition in Quantum Dots Using Kelvin Probe Force Microscopy

Nano Letters ◽  
2007 ◽  
Vol 7 (7) ◽  
pp. 2089-2093 ◽  
Author(s):  
S. Shusterman ◽  
A. Raizman ◽  
A. Sher ◽  
Y. Paltiel ◽  
A. Schwarzman ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy

Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons

2008 ◽  
Vol 1145 ◽  
Author(s):  
Michiharu Tabe ◽  
Zainal Arif Burhanudin ◽  
Ratno Nuryadi ◽  
Daniel Moraru ◽  
Maciej Ligowski ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Low Temperature ◽  
Selective Oxidation ◽  
Kelvin Probe Force Microscopy ◽  
Single Electron ◽  
Single Electron Transfer ◽  
Kelvin Probe ◽  
Photon Detection ◽  
Force Microscopy ◽  
Channel Region

AbstractWe have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described.

scholarly journals Spin effects in single-electron transport through carbon nanotube quantum dots

2007 ◽  
Vol 76 (4) ◽  
Author(s):  
Satoshi Moriyama ◽  
Tomoko Fuse ◽  
Tomohiro Yamaguchi ◽  
Koji Ishibashi
Keyword(s):  
Quantum Dots ◽  
Carbon Nanotube ◽  
Electron Transport ◽  
Single Electron ◽  
Spin Effects ◽  
Single Electron Transport

scholarly journals Single-Electron Transport Driven by Surface Acoustic Waves: Moving Quantum Dots Versus Short Barriers

2007 ◽  
Vol 146 (5-6) ◽  
pp. 607-627 ◽  
Author(s):  
P. Utko ◽  
J. Bindslev Hansen ◽  
P. E. Lindelof ◽  
C. B. Sørensen ◽  
K. Gloos
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Single Electron ◽  
Single Electron Transport

Effect of Quantum Hall State of Substrate on Single-Electron Transport of Carbon Nanotube Quantum Dots

2009 ◽  
Vol 48 (1) ◽  
pp. 015001
Author(s):  
Tomohiro Yamaguchi ◽  
Takeo Tsukamoto ◽  
Satoshi Moriyama ◽  
Masaki Suzuki ◽  
Koji Ishibashi
Keyword(s):  
Quantum Dots ◽  
Carbon Nanotube ◽  
Electron Transport ◽  
Quantum Hall ◽  
Single Electron ◽  
Single Electron Transport ◽  
Quantum Hall State
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