Rapid, facile synthesis of InSb twinning superlattice nanowires with a high-frequency photoconductivity response

We present a self-seeded solution–liquid–solid (SLS) synthesis route for InSb nanowires (NWs) using commercially available precursors at a relatively low temperature of about 175 °C, which takes only 1 min upon the injection of reductant.

Ambipolar transport in narrow bandgap semiconductor InSb nanowires

Excellent ambipolar transport characteristics are observed in nanowire field-effect transistors made from narrow bandgap semiconductor InSb nanowires.

Gallium-assisted growth of InSb nanowire

Indium antimony (InSb) nanowires have been synthesized by chemical vapor deposition and we found that adding gallium as the other evaporation resource can increase the density of nanowires and no doping pollution. For the growth of InSb nanowire, Au film was annealed to form Au nanoparticles as catalysts and explain its catalytic principle. We thought that gallium which coated on the surface of Au nanoparticles assisted nucleation and growth of InSb nanowire in the early stage. The diameter of the InSb nanowires was 60–100nm and 1-5μm in length. The grown nanowires have good crystallinity. We found that the surface of InSb was oxidized, and the main oxide was indium oxide. We discovered the tip morphologies of nanowires are different and discussed the causes of this phenomenon in detail.

Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio (diameter 150 nm, length 20 μ m) were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method. There are several reports on InSb nanowire growth in the pores of a mechanically rigid, nano-channel alumina template (NCA), where nanowire growth occurs in the pores of the NCA. This work on InSb nanowire growth in pores of track-etched polycarbonate (PC) membrane sheds light on the various factors that affect nucleation and nanowire growth. The average length and diameter of the as-grown nanowires was about 10 μ m and 150 nm, respectively. Two possible mechanisms accounting for two different morphologies of the as-grown nanowires are proposed. The polycrystallinity observed in some of the nanowires is explained using the 3D ‘nucleation-coalescence’ mechanism. On the other hand, single crystal nanowires with a high density of twin defects and stacking faults grow epitaxially by a two-dimensional (2D) nucleation/growth mechanism. To assess the electrical quality of the nanowires, two- and four-terminal devices were fabricated using a single InSb nanowire contacted by two Ni electrodes. It was found that, at low bias, the ohmic current is controlled by charge diffusion from the bulk contacts. On the other hand, at high bias, the effects of space charge limited current (SCLC) are evident in the current–voltage behavior, characteristic of transport through structures with reduced electrostatic screening. A cross-over from ohmic to SCLC occurs at about 0.14 V, yielding a free carrier concentration of the order of 10 14 cm − 3 .