AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation
2013 ◽
Vol 52
(8S)
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pp. 08JN02
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2014 ◽
Vol 32
(5)
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pp. 051204
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2019 ◽
Vol 52
(48)
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pp. 485106
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2011 ◽
Vol 50
◽
pp. 110202
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2018 ◽
Vol 36
(4)
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pp. 041203
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2003 ◽
Vol 42
(Part 1, No. 4B)
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pp. 2278-2280
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2016 ◽
Vol 213
(5)
◽
pp. 1222-1228
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