High breakdown voltage in AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors
2014 ◽
Vol 32
(5)
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pp. 051204
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2013 ◽
Vol 52
(8S)
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pp. 08JN02
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2007 ◽
Vol 46
(4B)
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pp. 2309-2311
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2019 ◽
Vol 52
(48)
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pp. 485106
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2011 ◽
Vol 50
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pp. 110202
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2018 ◽
Vol 36
(4)
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pp. 041203
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2003 ◽
Vol 42
(Part 1, No. 4B)
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pp. 2278-2280
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