Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JN02 ◽  
Author(s):  
Shu Yang ◽  
Sen Huang ◽  
Michael Schnee ◽  
Qing-Tai Zhao ◽  
Jürgen Schubert ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Electron Mobility Transistors

AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4Gate Insulator

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2278-2280 ◽  
Author(s):  
Masaru Ochiai ◽  
Mitsutoshi Akita ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Kouichi Maezawa ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Electron Mobility Transistors ◽  
Gan Heterostructure

scholarly journals Decoupling of epitaxy-related trapping effects in AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors

2016 ◽  
Vol 213 (5) ◽  
pp. 1222-1228 ◽  
Author(s):  
Martin Huber ◽  
Gilberto Curatola ◽  
Gianmauro Pozzovivo ◽  
Ingo Daumiller ◽  
Lauri Knuuttila ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Electron Mobility Transistors ◽  
Trapping Effects
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