Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Gate Recess

Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

Chinese Physics B ◽

10.1088/1674-1056/20/2/027304 ◽

2011 ◽

Vol 20 (2) ◽

pp. 027304 ◽

Cited By ~ 9

Author(s):

Xiao-Hua Ma ◽

Cai-Yuan Pan ◽

Li-Yuan Yang ◽

Hui-You Yu ◽

Ling Yang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Gate Recess

Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jn02 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN02 ◽

Cited By ~ 2

Author(s):

Shu Yang ◽

Sen Huang ◽

Michael Schnee ◽

Qing-Tai Zhao ◽

Jürgen Schubert ◽

...

Keyword(s):

Ion Implantation ◽

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Enhancement Mode ◽

Time-dependent characteristics and physical mechanisms of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under different bias conditions

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab3d52 ◽

2019 ◽

Vol 52 (48) ◽

pp. 485106 ◽

Cited By ~ 2

Author(s):

Shanjie Li ◽

Zhiyuan He ◽

Rui Gao ◽

Yiqiang Chen ◽

Yang Liu ◽

...

Keyword(s):

Electron Mobility ◽

Time Dependent ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Physical Mechanisms ◽

Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.110202 ◽

2011 ◽

Vol 50 ◽

pp. 110202 ◽

Cited By ~ 25

Author(s):

Sen Huang ◽

Shu Yang ◽

John Roberts ◽

Kevin J. Chen

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Voltage Instability ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

10.1116/1.5042261 ◽

2018 ◽

Vol 36 (4) ◽

pp. 041203 ◽

Cited By ~ 1

Author(s):

Chaker Fares ◽

Fan Ren ◽

Stephen J. Pearton ◽

Gwangseok Yang ◽

Jihyun Kim ◽

...

Keyword(s):

Alpha Particle ◽

Electron Mobility ◽

Irradiation Dose ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Particle Irradiation

Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates

Journal of Applied Physics ◽

10.1063/1.3488641 ◽

2010 ◽

Vol 108 (7) ◽

pp. 074502 ◽

Cited By ~ 20

Author(s):

Seshadri Kolluri ◽

Stacia Keller ◽

David Brown ◽

Geetak Gupta ◽

Siddharth Rajan ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4Gate Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2278 ◽

2003 ◽

Vol 42 (Part 1, No. 4B) ◽

pp. 2278-2280 ◽

Cited By ~ 37

Author(s):

Masaru Ochiai ◽

Mitsutoshi Akita ◽

Yutaka Ohno ◽

Shigeru Kishimoto ◽

Kouichi Maezawa ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Gan Heterostructure

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Applied Physics Letters ◽

10.1063/1.4939508 ◽

2016 ◽

Vol 108 (1) ◽

pp. 013507 ◽

Cited By ~ 3

Author(s):

Shichuang Sun ◽

Kai Fu ◽

Guohao Yu ◽

Zhili Zhang ◽

Liang Song ◽

...

Keyword(s):

Ion Implantation ◽

Leakage Current ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Decoupling of epitaxy-related trapping effects in AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors

physica status solidi (a) ◽

10.1002/pssa.201532752 ◽

2016 ◽

Vol 213 (5) ◽

pp. 1222-1228 ◽

Cited By ~ 1

Author(s):

Martin Huber ◽

Gilberto Curatola ◽

Gianmauro Pozzovivo ◽

Ingo Daumiller ◽

Lauri Knuuttila ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Trapping Effects

Enhancement‐Mode AlGaN/GaN Vertical Trench Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique

physica status solidi (a) ◽

10.1002/pssa.201900622 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900622

Author(s):

Akio Yamamoto ◽

Keito Kanatani ◽

Norifumi Yoneda ◽

Joel T. Asubar ◽

Hirokuni Tokuda ◽

...

Keyword(s):

Electron Mobility ◽

Drain Current ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Enhancement Mode ◽