Analysis of the structural, electronic and optic properties of Ni doped MgSiP2 semiconductor chalcopyrite compound

<div style="text-align: justify;">Thin film solar cell experience fast development, especially for thin film solar cell CdTe and Cu(In,Ga)Se2 (CIGS). However, the usage of rare element in the nature such as In, Te, and Ga and toxic such as Cd give limitation in the future development and production growth in big scale. Development of other alternative compound with maintain the profit of electronic and optic character which get from CIGS chalcopyrite compound will be explain. Compound of Cu2ZnSnSe4 (CZTSe) is downward compound from CIGS with substitute the In and Ga element with Zn and Sn. The compound kesterite structure can be modified with variation of chalcogen element to get wanted character in solar cell application. Efficiency record of photovoltaic devices conversion used this compound or downward reach 9.7%.©2016 JNSMR UIN Walisongo. All rights reserved.</div>

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Preparation and characterization of chalcopyrite compound for thin film solar cells

Alexandria Engineering Journal ◽

10.1016/j.aej.2011.01.006 ◽

2011 ◽

Vol 50 (1) ◽

pp. 35-42 ◽

Cited By ~ 7

Author(s):

Sh. Ebrahim ◽

I. Morsi ◽

M. Soliman ◽

M. Elsharkawi ◽

A. Elzaem

Keyword(s):

Thin Film ◽

Solar Cells ◽

Thin Film Solar Cells ◽

Chalcopyrite Compound

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A computer modeling study on the effect of an ordered vacancy chalcopyrite compound layer on the performance of a ZnO/CdS/CIS solar cell

10.1063/1.49425 ◽

1996 ◽

Cited By ~ 1

Author(s):

J. L. Gray ◽

R. J. Schwartz ◽

Y.-J. Lee

Keyword(s):

Solar Cell ◽

Computer Modeling ◽

Compound Layer ◽

Chalcopyrite Compound ◽

Modeling Study

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Crystal growth and properties of CuGaxIn1−xSe2 chalcopyrite compound

Solar Energy Materials ◽

10.1016/0165-1633(79)90052-2 ◽

1979 ◽

Vol 1 (1-2) ◽

pp. 3-9 ◽

Cited By ~ 47

Author(s):

C. Paorici ◽

L. Zanotti ◽

N. Romeo ◽

G. Sberveglieri ◽

L. Tarricone

Keyword(s):

Crystal Growth ◽

Chalcopyrite Compound

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Thermoelectric Properties of a Wide–Gap Chalcopyrite Compound AgInSe2

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.519.188 ◽

2012 ◽

Vol 519 ◽

pp. 188-192 ◽

Cited By ~ 11

Author(s):

P.Z. Ying ◽

H. Zhou ◽

Y.L. Gao ◽

Y.Y. Li ◽

Y.P. Li ◽

...

Keyword(s):

Thermal Conductivity ◽

Electrical Conductivity ◽

Thermoelectric Properties ◽

Figure Of Merit ◽

Chemical Compositions ◽

Thermoelectric Figure Of Merit ◽

Thermoelectric Figure ◽

Remarkable Improvement ◽

Wide Gap ◽

Chalcopyrite Compound

Here we report the thermoelectric properties of a wide–gap chalcopyrite compound AgInSe2, and observed the remarkable improvement in electrical conductivity σ, due to the bandgap (Eg = 1.12 eV) reduction compared to In2Se3. The improvement in σ is directly responsible for the enhancement of thermoelectric figure of merit ZT, though the thermal conductivity is much higher at 500 ~ 724 K. The maximum ZT value is 0.34 at 724 K, increasing by a factor of 4, indicating that this chalcopyrite compound is of a potential thermoelectric candidate if further optimizations of chemical compositions and structure are made.

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Structural Properties of Ag-Based Chalcopyrite Compound Thin Films for Solar Cells

MRS Proceedings ◽

10.1557/proc-865-f5.12 ◽

2005 ◽

Vol 865 ◽

Cited By ~ 7

Author(s):

Hiroki Ishizaki ◽

Keiichiro Yamada ◽

Ryouta Arai ◽

Yasuyuki Kuromiya ◽

Yukari Masatsugu ◽

...

Keyword(s):

Thin Films ◽

Rietveld Analysis ◽

Atomic Ratio ◽

Band Gap Energy ◽

X Ray Diffraction ◽

Structural And Optical Properties ◽

X Ray ◽

Glass Substrates ◽

Crystallographic Property ◽

Chalcopyrite Compound

AbstractAgGa5Se8 and Ag(In1-xGax)Se2 thin films with different Ag/Ga atomic ratios have been deposited on the corning 1737 glass substrates by molecular beam epitaxy (MBE) system. This crystallographic property of AgGa5Se8 thin films has been investigated by x-ray diffraction and rietveld analysis. These films had the tetragonal structure with the space group of P-42m, regardless of Ag/Ga atomic ratio. The lattice parameters and the optical band gap energy decreased with an increase in the Ag/Ga atomic ratio. Thus, the structural and optical properties of these AgGa5Se8 thin films were controlled by the Ag/Ga atomic ratio.

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