scholarly journals Chemical sputtering by H2+ and H3+ ions during silicon deposition

2016 ◽  
Vol 120 (5) ◽  
pp. 053304 ◽  
Author(s):  
K. Landheer ◽  
W. J. Goedheer ◽  
I. Poulios ◽  
R. E. I. Schropp ◽  
J. K. Rath
Keyword(s):  
Silicon Deposition ◽  
Chemical Sputtering

2D and 1D modeling of AMT barrel reactors for silicon deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-273-Pr8-280
Author(s):  
M. Masi ◽  
C. Cavallotti ◽  
S. Carrà ◽  
D. Crippa ◽  
G. Vaccari
Keyword(s):  
Silicon Deposition ◽  
1D Modeling

Modelling of a new parallel-flow CVD reactor for low pressure silicon deposition

1992 ◽  
Vol 47 (9-11) ◽  
pp. 2921-2926 ◽  
Author(s):  
S. Bismo ◽  
P. Duverneuil ◽  
L. Pibouleau ◽  
S. Domenech ◽  
J.P. Couderc
Keyword(s):  
Low Pressure ◽  
Parallel Flow ◽  
Silicon Deposition

scholarly journals CONVECTION AND CHEMISTRY EFFECTS IN CVD - A 3-D ANALYSIS FOR SILICON DEPOSITION

1989 ◽  
Vol 50 (C5) ◽  
pp. C5-17-C5-34 ◽  
Author(s):  
S. A. GOKOGLU ◽  
M. KUCZMARSKI ◽  
P. TSUI ◽  
A. CHAIT
Keyword(s):  
Silicon Deposition

Physical and Chemical Sputtering at Very Low Ion Energy: the Importance of the Sputtering Threshold

1988 ◽  
Vol 129 ◽  
Author(s):  
Christoph Steinbruchel
Keyword(s):  
Threshold Energy ◽  
Surface Binding ◽  
Ion Energy ◽  
Chemical Sputtering ◽  
Surface Binding Energy ◽  
Physical Sputtering ◽  
Chemical Etch ◽  
Ion Energies ◽  
The Difference ◽  
Physical And Chemical

ABSTRACTA variety of data for physical etching (i.e. sputtering) and for ion-enhanced chemical etching of Si and SiO2 is analyzed in the very-low-ion-energy regime. Bombardment by inert ions alone, by reactive ions, and by inert ions in the presence of reactiveneutrals is considered. In all cases the etch yield follows a square root dependence on the ion energy all the way down to the threshold energy for etching. At the same time, the threshold energy has a non-negligible effect on the etch yield even at intermediate ion energies. The difference between physical and ion-enhanced chemical etch yields can be accounted for by a reduction in the average surface binding energy of the etch products and a corresponding reduction in the threshold energy for etching. These results suggest that, in general, the selectivity for ion-enhanced etch processes relative to physical sputtering can be increased significantly at low ion energy.

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