The channel mobility and oxide reliability of metal-oxide-semiconductor field-effect
transistors (MOSFETs) on 4H-SiC (0001) carbon face were investigated. The gate oxide was
fabricated by using dry-oxidized film followed by pyrogenic reoxidation annealing (ROA).
Significant improvements in the oxide reliability were observed by time-dependent dielectric
breakdown (TDDB) measurement. Furthermore, the field-effect inversion channel mobility (μFE) of
MOSFETs fabricated by using pyrogenic ROA was as high as that of conventional 4H-SiC (0001)
MOSFETs having the pyrogenic-oxidized gate oxide. It is suggested that the pyrogenic ROA of dry
oxide as a method of gate oxide fabrication satisfies both channel mobility and oxide reliability on
4H-SiC (0001) carbon-face MOSFETs.